BF323-1
Transistor Datasheet. Parameters and Characteristics. Type Designator: BF323-1
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.4
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 3
Maximum collector current |Ic max|, A: 0.6
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: - Package of BF323-1
transistor: TO39
BF323-1
Equivalent Transistors - Cross-Reference Search BF323-1
PDF doc:NO PDF! See also transistors datasheet: BF321E
, BF321F
, BF322
, BF322-1
, BF322-2
, BF322-3
, BF322-4
, BF323
, KT829A
, BF323-2
, BF323-3
, BF323-4
, BF324
, BF325
, BF329
, BF330
, BF332
. Keywords| BF323-1
Datasheet | BF323-1
Datenblatt | BF323-1
RoHS | BF323-1
Distributor | | BF323-1
Application Notes | BF323-1
Component | BF323-1
Circuit | BF323-1
Schematic | | BF323-1
Equivalent | BF323-1
Cross Reference | BF323-1
Data Sheet | BF323-1
Fiche Technique |
|
