2N2979A
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N2979A
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.25
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 0.03
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 60
Collector capacitance (Cc), pF: 4
Forward current transfer ratio (hFE), min: 120
Noise Figure, dB: - Package of 2N2979A
transistor: TO71
2N2979A
Equivalent Transistors - Cross-Reference Search 2N2979A
PDF document for downloads: PDF unavailable! See also transistors datasheet: 2N2972
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. Keywords| 2N2979A
Datasheet | 2N2979A
Datenblatt | 2N2979A
RoHS | 2N2979A
Distributor | | 2N2979A
Application Notes | 2N2979A
Component | 2N2979A
Circuit | 2N2979A
Schematic | | 2N2979A
Equivalent | 2N2979A
Cross Reference | 2N2979A
Data Sheet | 2N2979A
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