BF393W1 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BF393W1

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1.2

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 300

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BF393W1 transistor: TO92

BF393W1 Equivalent Transistors - Cross-Reference Search

BF393W1 PDF document for downloads:

5.1. bf392_bf393.pdf Size:116K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF392/D High Voltage Transistors NPN Silicon BF392 COLLECTOR 3 BF393 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol BF392 BF393 Unit Collector–Emitter Voltage VCEO 250 300 Vdc 1 2 3 Collector–Base Voltage VCBO 250 300 Vdc Emitter–Base Voltage VEBO 6.0 Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0

5.2. bf393rev0.pdf Size:88K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF393/D High Voltage Transistor NPN Silicon COLLECTOR BF393 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 TO–92 (TO–226AA) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 300 Vdc Collector–Base Voltage VCBO 300 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to RqJA 200 °C/W Ambient Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0 mAdc, IB =0) 300 —

5.3. bf393.pdf Size:56K _onsemi

BF393 High Voltage Transistor NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector -Emitter Voltage VCEO 300 Vdc Collector -Base Voltage VCBO 300 Vdc 1 Emitter -Base Voltage VEBO 6.0 Vdc EMITTER Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above = 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C TO-92 CASE 29-11 Operating and Storage Junction TJ, Tstg -55 to +150 °C 1 STYLE 1 Temperature Range 2 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W BF Maximum ratings are those values beyond which device damage can occur. 393 Maximum ratings applied to the device are individual stress limit values (not AYWW G normal operating conditions) and are n

See also transistors datasheet: BF393 , BF393K , BF393L , BF393M , BF393P , BF393P1 , BF393P2 , BF393Q , 2N5088 , BF393W2 , BF394 , BF394A , BF394B , BF394C , BF395 , BF395C , BF395D .

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