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BF422
  BF422
  BF422
 
BF422
  BF422
  BF422
 
BF422
  BF422
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU211
BU212 .. BUF410I
BUF420 .. BUS22CF
BUS23 .. BUW85
BUW86 .. BUY85
BUY86 .. CD9014A
CD9014B .. CIL157B
CIL158 .. CL166C
CL166D .. CPS2550B
CPS4010B .. CSA968AO
CSA968AY .. CSC2688O
CSC2688R .. CTP1111
CTP1320 .. D29J8
D29J9 .. D42CU7
D42CU8 .. D66DS5
D66DS6 .. DT4112
DT4120 .. DTC023JUB
DTC023YEB .. DTL3508
DTL3510 .. ECG2342
ECG2343 .. ED1701N
ED1702 .. ET375
ET378 .. FF2484
FF2906 .. FMG8A
FMG9A .. FPN330
FPN330A .. FXT603
FXT603SM .. GEP2955
GEP3055 .. GET3903
GET3904 .. GSRU15030
GSRU15030A .. GT5149
GT5151 .. HEPS7000
HEPS7001 .. HSE2012
HSE210 .. IR4059
IR4502 .. K2119B
K2120 .. KRA305
KRA305E .. KRC234S
KRC235M .. KRX204E
KRX204U .. KSC1008-Y
KSC1009 .. KSC5028
KSC5028-N .. KSE45H-11
KSE45H-2 .. KT301J
KT301V .. KT361D2
KT361D3 .. KT683D
KT683E .. KT819GM
KT819V .. KT939B
KT939B1 .. KTC3228
KTC3229 .. LBC546
LBC546A .. MD34
MD3409 .. MJ16020
MJ16022 .. MJE15034
MJE15035 .. MJH6287
MJL1302A .. MMBT2222Q
MMBT2222R .. MMCM2484
MMCM2857 .. MP16IA11
MP1711 .. MP8533
MP8534 .. MPS4275
MPS4354 .. MQ2904A
MQ2905 .. MT6003
MT9001 .. NA22YI
NA22YJ .. NB022HJ
NB022HK .. NB221XX
NB221XY .. NKT3710
NKT3711 .. NR461HE
NR461HF .. NTE291
NTE292 .. P416
P416A .. PDTA124TU
PDTA124XE .. PMST5550
PMST5551 .. PTB20152
PTB20156 .. RCP111D
RCP113A .. RN1965CT
RN1965FE .. RN2971FS
RN2972CT .. S9018
S9018T .. SF150
SF194 .. SMBTA64
SMBTA92 .. SRC1219E
SRC1219EF .. STN715
STN724 .. T1686
T1687 .. TD265C
TD366 .. TIP36C
TIP36CA .. TK20C
TK21 .. TN834
TN835 .. TS7990
TS7992 .. UN2212
UN2213 .. US6X3
US6X4 .. ZTX212A
ZTX212AK .. ZTX705
ZTX712 .. ZXTPS720MC
 
BF422 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BF422 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BF422

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.83

Maximum collector-base voltage |Ucb|, V: 250

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 1.6

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of BF422 transistor: TO92

BF422 Equivalent Transistors - Cross-Reference Search

BF422 PDF doc:

1.1. bf420_bf422.pdf Size:114K _motorola

BF422
BF422
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF420/D High Voltage Transistors NPN Silicon BF420 COLLECTOR 2 BF422 3 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol BF420 BF422 Unit CollectorEmitter Voltage VCEO 300 250 Vdc 1 2 3 CollectorBase Voltage VCBO 300 250 Vdc EmitterBase Voltage VEBO 5.0 Vdc CASE 2904, STYLE 14 TO92 (TO226AA) Collector Current Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0

1.2. bf420_bf422_cnv_2.pdf Size:48K _philips

BF422
BF422
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF420; BF422 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF420; BF422 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector Class-B video output stages in colour television and 3 emitter professional monitor equipment. DESCRIPTION 1 handbook, halfpage 2 NPN transistors in a TO-92 plastic package. 2 PNP complements: BF421 and BF423. 3 1 3 MAM259 Fig.1 Simplified outline (TO-92) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF420 - 300 V BF422 - 250 V VCEO collector-emitter voltage open base BF420 - 300 V BF422 - 250 V ICM peak collector current - 100 mA Ptot total power dissipation Tamb ? 25 C - 830 mW hFE DC cur

1.3. bf420_bf422.pdf Size:109K _philips

BF422
BF422
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BF420; BF422 NPN high-voltage transistors Product data sheet 2004 Nov 10 Supersedes data of 1996 Dec 09 NXP Semiconductors Product data sheet NPN high-voltage transistors BF420; BF422 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector Class-B video output stages in colour television and 3 emitter professional monitor equipment. DESCRIPTION 1 NPN transistors in a TO-92 plastic package. handbook, halfpage 2 2 PNP complements: BF421 and BF423. 3 1 3 MAM259 Fig.1 Simplified outline (TO-92) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BF420 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 BF422 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF420 - 300 V BF422 - 250 V VCEO collector-emitter voltage open base BF420 - 300 V BF422 -

1.4. bf420_bf422_1.pdf Size:62K _philips

BF422
BF422
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF420; BF422 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF420; BF422 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector Class-B video output stages in colour television and 3 emitter professional monitor equipment. DESCRIPTION 1 handbook, halfpage 2 NPN transistors in a TO-92 plastic package. 2 PNP complements: BF421 and BF423. 3 1 3 MAM259 Fig.1 Simplified outline (TO-92) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF420 - 300 V BF422 - 250 V VCEO collector-emitter voltage open base BF420 - 300 V BF422 - 250 V ICM peak collector current - 100 mA Ptot total power dissipation Tamb ? 25 C - 830 mW hFE DC cur

1.5. bf420_bf422.pdf Size:134K _siemens

BF422
BF422
NPN Silicon Transistors BF 420 With High Reverse Voltage BF 422 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 421, BF 423 (PNP) 2 3 1 Type Marking Ordering Code Pin Configuration Package1) 1 2 3 BF 420 Q62702-F531 E C B TO-92 BF 422 Q62702-F495 Maximum Ratings Parameter Symbol Values Unit BF 420 BF 422 Collector-emitter voltage VCE0 250 V Collector-emitter voltage VCER 300 RBE = 2.7 k Collector-base voltage VCB0 300 250 Emitter-base voltage VEB0 5 Collector current IC 50 mA Peak base current IBM 100 Total power dissipation, TC = 88 ?C Ptot 830 mW Junction temperature Tj 150 ?C Storage temperature range Tstg 65 + 150 Thermal Resistance Junction - ambient Rth JA ? 150 K/W Junction - case2) Rth JC ? 75 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm ? 25 mm ? 0.5 mm. 5.91 Semiconductor Group 544 BF 420 BF 422 Electrical Characteristics a

1.6. bf420_bf422.pdf Size:61K _onsemi

BF422
BF422
BF420, BF422 High Voltage Transistors NPN Silicon Features Pb-Free Package is Available* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol BF420 BF422 Unit 3 Collector-Emitter Voltage VCEO 300 250 Vdc BASE Collector-Base Voltage VCBO 300 250 Vdc 1 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 50 mAdc Collector Current - Peak ICM 100 mA MARKING DIAGRAM Total Device Dissipation (Note 1) PD @ TA = 25C 830 mW Derate above 25C 6.6 mW/C BF42x TO-92 Operating and Storage Junction TJ, Tstg -55 to +150 C CASE 29 AYWW G Temperature Range STYLE 14 G 1 THERMAL CHARACTERISTICS 2 3 Characteristic Symbol Max Unit Thermal Resistance, RqJA C/W BF42x = Device Code Junction-to-Ambient 150 x = 0 or 2 A = Assembly Location Thermal Resistance, RqJL C/W Y = Year Junction-to-Lead 68 WW = Work Week G = Pb-Free Package Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to th

1.7. bf422.pdf Size:310K _utc

BF422
BF422
UNISONIC TECHNOLOGIES CO., LTD BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ? FEATURES * Collector-Emitter Voltage: V =250V. CEO * Complementary to UTC BF423. 1 TO-92 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BF422L-T92-B BF422G-T92-B TO-92 E C B Tape Box BF422L-T92-K BF422G-T92-K TO-92 E C B Bulk www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., LTD QW-R201-063.C BF422 NPN EPITAXIAL SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V 250 V CBO Collector-Emitter Voltage V 250 V CEO Emitter-base voltage V 5 V EBO Collector current (DC) I 50 mA C collector current (Peak) I 100 mA CP base current I 50 mA B Collector Power dissipation P 625 mW C Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the dev

1.8. bf422.pdf Size:20K _auk

BF422
BF422
BF422 Semiconductor Semiconductor NPN Silicon Transistor Descriptions High voltage application Monitor equipment application Features Collector-Emitter voltage : VCEO=250V Complementary pair with BF423 Ordering Information Type NO. Marking Package Code BF422 BF422 TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 2.250.1 0.40.02 2.060.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Collector 3. Base KST-9065-000 1 4.5 0.1 0.38 1.20 0.1 BF422 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 250 V Collector-Emitter voltage VCEO 250 V Emitter-base VEBO 5V Collector current IC 100 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 250 - - V Collector cut-off current ICBO VCB=2

1.9. bf422bpl.pdf Size:103K _cdil

BF422
BF422
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422 (BPL) TO-92 BCE Designed for High Voltage Video Amplifier in Television Receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C ) DESCRIPTION SYMBOL VALUE UNITS Collector -Base Voltage VCBO 250 V Collector -Emitter Voltage VCEO 250 V Emitter -Base Voltage VEBO 5.0 V Collector Current Continuous IC 500 mA Power Dissipation@ Ta=25 deg C PD 900 mW Derate Above 25 deg C 7.2 mW/deg C Power Dissipation@ Tc=25 deg C PD 2.75 W Derate Above 25 deg C 22 mW/deg C Operating & Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE From Junction to Case Rth(j-c) 45 deg C/W From Junction to Ambient Rth(j-a) 156 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS min max Collector -Emitter Voltage VCEO IC=1.0mA,IB=0 250 - V Collector -Base Voltage VCBO IC

1.10. bf420_bf422.pdf Size:145K _cdil

BF422
BF422
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF420 VIDEO TRANSISTORS BF422 TO-92 Plastic Package Designed For High Voltage Video Amplifier In Television Receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 420 422 UNITS Collector Emitter Voltage VCEO 300 250 V Collector Base Voltage VCBO 300 250 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 500 mA Power Dissipation@ Ta=25?C PD 800 mW Derate Above 25?C 6.4 mW/?C Power Dissipation@ Tc=25?C PD 2.75 W Derate Above 25?C 22 mW/?C Operating And Storage Junction Tj, Tstg -55 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to ambient Rth(j-a) 156 ?C/W Junction to case Rth(j-c) 45 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION 422 420 UNITS Collector Emitter Voltage* VCEO IC=1.0mA,IB=0 >250 >300 V Collector Base Volt

1.11. bf422.pdf Size:46K _kec

BF422
BF422
SEMICONDUCTOR BF422 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. B C FEATURES High Voltage : VCEO>250V Complementary to BF423. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 250 V K 0.55 MAX F F L 2.30 VCEO Collector-Emitter Voltage 250 V M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage 5 V 1. EMITTER IC DC 50 2. COLLECTOR Collector Current mA 3. BASE ICP Peak 100 PC Collector Power Dissipation 625 mW IB Base Current 50 mA TO-92 Tj Junction Temperature 150 Tstg -65 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCB=200V, IE=0 - - 10 nA ICBO Collector Cut-off Current VCB=200V, IE=0, Tj=150 - - 10 A IEBO VEB=5V,

1.12. hbf422.pdf Size:45K _hsmc

BF422
BF422
Spec. No. : HE6404 HI-SINCERITY Issued Date : 1993.03.18 Revised Date : 2004.06.18 MICROELECTRONICS CORP. Page No. : 1/4 HBF422 NPN EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................................................... 250 V VCEO Col

1.13. bf422a3.pdf Size:135K _cystek

BF422
BF422
Spec. No. : C234A3 Issued Date : 2004.02.27 CYStech Electronics Corp. Revised Date : 2004.07.28 Page No. : 1/4 NPN Epitaxial Planar Transistor BF422A3 Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF423A3. Features • Low feedback capacitance. Applications • Class-B video output stages in color television and professional monitor equipment. Symbol Outline BF422A3 TO-92 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Conditions Min Max Unit Collector-Base Voltage VCBO Open emitter 250 V Collector-Emitter Voltage VCEO Open base 250 V Emitter-Base Voltage VEBO Open collector 5 V Collector Current (DC) IC 50 mA Peak Collector Current ICM 100 mA Peak Base Current IBM 50 mA Power Dissipation; Pd Tamb≤25℃ ; Note 830 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -65 +150 °C Operating Ambient Temperature Tamb -65 +150 °C

See also transistors datasheet: BF420P3 , BF420S , BF421 , BF421A , BF421L , BF421P , BF421P3 , BF421S , BU508A , BF422A , BF422L , BF422P , BF422P3 , BF422S , BF422W , BF422W3 , BF423 .

Keywords

 BF422 Datasheet  BF422 Datenblatt  BF422 RoHS  BF422 Distributor
 BF422 Application Notes  BF422 Component  BF422 Circuit  BF422 Schematic
 BF422 Equivalent  BF422 Cross Reference  BF422 Data Sheet  BF422 Fiche Technique

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