All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BF422
  BF422
  BF422
 
BF422
  BF422
  BF422
 
BF422
  BF422
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508DXI
BU508FI .. BUL6822
BUL6822A .. BUV39
BUV40 .. BUX80/6
BUX80/7 .. C9080
C9081 .. CEN-U45
CEN-U51 .. CJD3055
CJD31C .. CMPT918
CMPT930 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM7
D44VM8 .. DKS21
DKS22 .. DTA123EUA
DTA123J .. DTC143XE
DTC143XEA .. DZT491
DZT5401 .. ECG351
ECG352 .. ESM117
ESM118 .. FB3727
FB3728 .. FJV3113R
FJV3114R .. FMMT4964
FMMT497 .. FT400B
FT401 .. GC112
GC115 .. GES4400
GES4401 .. GI2715
GI2716 .. GT309D
GT309E .. HA7540
HA7541 .. HN1C01F
HN1C01FE .. HUN5236
HUN5237 .. JC559A
JC559C .. KF630D
KF630S .. KRA729U
KRA730E .. KRC662U
KRC663F .. KSA643
KSA643-G .. KSC2682-Y
KSC2688 .. KSD2012
KSD2012-G .. KSR2102
KSR2103 .. KT315E-1
KT315E1 .. KT610A
KT610B .. KT8127A
KT8127A-1 .. KT852G
KT852V .. KTA1703
KTA1704 .. KTC813U
KTC814U .. MA287
MA393 .. MH0812
MH0813 .. MJ8503
MJ8504 .. MJE41
MJE41A .. MM4033
MM4036 .. MMBT4403WT1
MMBT4888 .. MMUN2134LT1
MMUN2134LT2 .. MP3905R
MP3906 .. MPQ5447
MPQ5449 .. MPS834
MPS835 .. MRF427
MRF428 .. MZT127
MZT2955 .. NB011FJ
NB011FK .. NB123F
NB123FH .. NB323H
NB323K .. NPS3721
NPS3725 .. NSS40300
NSS40300DD .. OC466K
OC467 .. PBSS306NX
PBSS306NZ .. PEMB30
PEMB4 .. PN4250A
PN4257 .. PZTA14
PZTA27 .. RN1307
RN1308 .. RN2401
RN2402 .. RT484
RT497M .. SD3866AF
SD3960F .. SGS130
SGS131 .. SRA2202EF
SRA2202M .. STA3360PI
STA723D .. SUT161G
SUT290 .. TA1703B
TA1704 .. TI804
TI805 .. TIPL13004
TIPL13005 .. TN3398
TN3402 .. TP4258
TP4258A .. UMG1N
UMG2N .. UN6214
UN6215Q .. ZT1486A
ZT1487 .. ZTX342L
ZTX342M .. ZXTN25100DZ
ZXTN26020DMF .. ZXTPS720MC
 
BF422 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BF422 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BF422

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.83

Maximum collector-base voltage |Ucb|, V: 250

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 1.6

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of BF422 transistor: TO92

BF422 Equivalent Transistors - Cross-Reference Search

BF422 PDF doc:

1.1. bf420_bf422.pdf Size:114K _motorola

BF422
BF422
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF420/D High Voltage Transistors NPN Silicon BF420 COLLECTOR 2 BF422 3 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol BF420 BF422 Unit CollectorEmitter Voltage VCEO 300 250 Vdc 1 2 3 CollectorBase Voltage VCBO 300 250 Vdc EmitterBase Voltage VEBO 5.0 Vdc CASE 2904, STYLE 14 TO92 (TO226AA) Collector Current Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0

1.2. bf420_bf422_cnv_2.pdf Size:48K _philips

BF422
BF422
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF420; BF422 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF420; BF422 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector Class-B video output stages in colour television and 3 emitter professional monitor equipment. DESCRIPTION 1 handbook, halfpage 2 NPN transistors in a TO-92 plastic package. 2 PNP complements: BF421 and BF423. 3 1 3 MAM259 Fig.1 Simplified outline (TO-92) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF420 - 300 V BF422 - 250 V VCEO collector-emitter voltage open base BF420 - 300 V BF422 - 250 V ICM peak collector current - 100 mA Ptot total power dissipation Tamb ? 25 C - 830 mW hFE DC cur

1.3. bf420_bf422.pdf Size:109K _philips

BF422
BF422
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BF420; BF422 NPN high-voltage transistors Product data sheet 2004 Nov 10 Supersedes data of 1996 Dec 09 NXP Semiconductors Product data sheet NPN high-voltage transistors BF420; BF422 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector Class-B video output stages in colour television and 3 emitter professional monitor equipment. DESCRIPTION 1 NPN transistors in a TO-92 plastic package. handbook, halfpage 2 2 PNP complements: BF421 and BF423. 3 1 3 MAM259 Fig.1 Simplified outline (TO-92) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BF420 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 BF422 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF420 - 300 V BF422 - 250 V VCEO collector-emitter voltage open base BF420 - 300 V BF422 -

1.4. bf420_bf422_1.pdf Size:62K _philips

BF422
BF422
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF420; BF422 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF420; BF422 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector Class-B video output stages in colour television and 3 emitter professional monitor equipment. DESCRIPTION 1 handbook, halfpage 2 NPN transistors in a TO-92 plastic package. 2 PNP complements: BF421 and BF423. 3 1 3 MAM259 Fig.1 Simplified outline (TO-92) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF420 - 300 V BF422 - 250 V VCEO collector-emitter voltage open base BF420 - 300 V BF422 - 250 V ICM peak collector current - 100 mA Ptot total power dissipation Tamb ? 25 C - 830 mW hFE DC cur

1.5. bf420_bf422.pdf Size:134K _siemens

BF422
BF422
NPN Silicon Transistors BF 420 With High Reverse Voltage BF 422 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 421, BF 423 (PNP) 2 3 1 Type Marking Ordering Code Pin Configuration Package1) 1 2 3 BF 420 Q62702-F531 E C B TO-92 BF 422 Q62702-F495 Maximum Ratings Parameter Symbol Values Unit BF 420 BF 422 Collector-emitter voltage VCE0 250 V Collector-emitter voltage VCER 300 RBE = 2.7 k Collector-base voltage VCB0 300 250 Emitter-base voltage VEB0 5 Collector current IC 50 mA Peak base current IBM 100 Total power dissipation, TC = 88 ?C Ptot 830 mW Junction temperature Tj 150 ?C Storage temperature range Tstg 65 + 150 Thermal Resistance Junction - ambient Rth JA ? 150 K/W Junction - case2) Rth JC ? 75 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm ? 25 mm ? 0.5 mm. 5.91 Semiconductor Group 544 BF 420 BF 422 Electrical Characteristics a

1.6. bf420_bf422.pdf Size:61K _onsemi

BF422
BF422
BF420, BF422 High Voltage Transistors NPN Silicon Features Pb-Free Package is Available* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol BF420 BF422 Unit 3 Collector-Emitter Voltage VCEO 300 250 Vdc BASE Collector-Base Voltage VCBO 300 250 Vdc 1 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 50 mAdc Collector Current - Peak ICM 100 mA MARKING DIAGRAM Total Device Dissipation (Note 1) PD @ TA = 25C 830 mW Derate above 25C 6.6 mW/C BF42x TO-92 Operating and Storage Junction TJ, Tstg -55 to +150 C CASE 29 AYWW G Temperature Range STYLE 14 G 1 THERMAL CHARACTERISTICS 2 3 Characteristic Symbol Max Unit Thermal Resistance, RqJA C/W BF42x = Device Code Junction-to-Ambient 150 x = 0 or 2 A = Assembly Location Thermal Resistance, RqJL C/W Y = Year Junction-to-Lead 68 WW = Work Week G = Pb-Free Package Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to th

1.7. bf422.pdf Size:310K _utc

BF422
BF422
UNISONIC TECHNOLOGIES CO., LTD BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ? FEATURES * Collector-Emitter Voltage: V =250V. CEO * Complementary to UTC BF423. 1 TO-92 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BF422L-T92-B BF422G-T92-B TO-92 E C B Tape Box BF422L-T92-K BF422G-T92-K TO-92 E C B Bulk www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., LTD QW-R201-063.C BF422 NPN EPITAXIAL SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V 250 V CBO Collector-Emitter Voltage V 250 V CEO Emitter-base voltage V 5 V EBO Collector current (DC) I 50 mA C collector current (Peak) I 100 mA CP base current I 50 mA B Collector Power dissipation P 625 mW C Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the dev

1.8. bf422.pdf Size:20K _auk

BF422
BF422
BF422 Semiconductor Semiconductor NPN Silicon Transistor Descriptions High voltage application Monitor equipment application Features Collector-Emitter voltage : VCEO=250V Complementary pair with BF423 Ordering Information Type NO. Marking Package Code BF422 BF422 TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 2.250.1 0.40.02 2.060.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Collector 3. Base KST-9065-000 1 4.5 0.1 0.38 1.20 0.1 BF422 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 250 V Collector-Emitter voltage VCEO 250 V Emitter-base VEBO 5V Collector current IC 100 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 250 - - V Collector cut-off current ICBO VCB=2

1.9. bf422bpl.pdf Size:103K _cdil

BF422
BF422
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422 (BPL) TO-92 BCE Designed for High Voltage Video Amplifier in Television Receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C ) DESCRIPTION SYMBOL VALUE UNITS Collector -Base Voltage VCBO 250 V Collector -Emitter Voltage VCEO 250 V Emitter -Base Voltage VEBO 5.0 V Collector Current Continuous IC 500 mA Power Dissipation@ Ta=25 deg C PD 900 mW Derate Above 25 deg C 7.2 mW/deg C Power Dissipation@ Tc=25 deg C PD 2.75 W Derate Above 25 deg C 22 mW/deg C Operating & Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE From Junction to Case Rth(j-c) 45 deg C/W From Junction to Ambient Rth(j-a) 156 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS min max Collector -Emitter Voltage VCEO IC=1.0mA,IB=0 250 - V Collector -Base Voltage VCBO IC

1.10. bf420_bf422.pdf Size:145K _cdil

BF422
BF422
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF420 VIDEO TRANSISTORS BF422 TO-92 Plastic Package Designed For High Voltage Video Amplifier In Television Receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 420 422 UNITS Collector Emitter Voltage VCEO 300 250 V Collector Base Voltage VCBO 300 250 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 500 mA Power Dissipation@ Ta=25?C PD 800 mW Derate Above 25?C 6.4 mW/?C Power Dissipation@ Tc=25?C PD 2.75 W Derate Above 25?C 22 mW/?C Operating And Storage Junction Tj, Tstg -55 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to ambient Rth(j-a) 156 ?C/W Junction to case Rth(j-c) 45 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION 422 420 UNITS Collector Emitter Voltage* VCEO IC=1.0mA,IB=0 >250 >300 V Collector Base Volt

1.11. bf422.pdf Size:46K _kec

BF422
BF422
SEMICONDUCTOR BF422 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. B C FEATURES High Voltage : VCEO>250V Complementary to BF423. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 250 V K 0.55 MAX F F L 2.30 VCEO Collector-Emitter Voltage 250 V M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage 5 V 1. EMITTER IC DC 50 2. COLLECTOR Collector Current mA 3. BASE ICP Peak 100 PC Collector Power Dissipation 625 mW IB Base Current 50 mA TO-92 Tj Junction Temperature 150 Tstg -65 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCB=200V, IE=0 - - 10 nA ICBO Collector Cut-off Current VCB=200V, IE=0, Tj=150 - - 10 A IEBO VEB=5V,

1.12. hbf422.pdf Size:45K _hsmc

BF422
BF422
Spec. No. : HE6404 HI-SINCERITY Issued Date : 1993.03.18 Revised Date : 2004.06.18 MICROELECTRONICS CORP. Page No. : 1/4 HBF422 NPN EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................................................... 250 V VCEO Col

1.13. bf422a3.pdf Size:135K _cystek

BF422
BF422
Spec. No. : C234A3 Issued Date : 2004.02.27 CYStech Electronics Corp. Revised Date : 2004.07.28 Page No. : 1/4 NPN Epitaxial Planar Transistor BF422A3 Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF423A3. Features • Low feedback capacitance. Applications • Class-B video output stages in color television and professional monitor equipment. Symbol Outline BF422A3 TO-92 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Conditions Min Max Unit Collector-Base Voltage VCBO Open emitter 250 V Collector-Emitter Voltage VCEO Open base 250 V Emitter-Base Voltage VEBO Open collector 5 V Collector Current (DC) IC 50 mA Peak Collector Current ICM 100 mA Peak Base Current IBM 50 mA Power Dissipation; Pd Tamb≤25℃ ; Note 830 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -65 +150 °C Operating Ambient Temperature Tamb -65 +150 °C

See also transistors datasheet: BF420P3 , BF420S , BF421 , BF421A , BF421L , BF421P , BF421P3 , BF421S , BU508A , BF422A , BF422L , BF422P , BF422P3 , BF422S , BF422W , BF422W3 , BF423 .

Keywords

 BF422 Datasheet  BF422 Datenblatt  BF422 RoHS  BF422 Distributor
 BF422 Application Notes  BF422 Component  BF422 Circuit  BF422 Schematic
 BF422 Equivalent  BF422 Cross Reference  BF422 Data Sheet  BF422 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com