All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BF423
  BF423
  BF423
 
BF423
  BF423
  BF423
 
BF423
  BF423
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
BF423 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BF423 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BF423

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.83

Maximum collector-base voltage |Ucb|, V: 250

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 1.6

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of BF423 transistor: TO92

BF423 Equivalent Transistors - Cross-Reference Search

BF423 PDF doc:

1.1. bf421_bf423.pdf Size:119K _motorola

BF423
BF423
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF421/D High Voltage Transistors BF421 PNP Silicon BF423 COLLECTOR 2 3 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol BF421 BF423 Unit CASE 29–04, STYLE 14 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO –300 –250 Vdc Collector–Base Voltage VCBO –300 –250 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation PD 625 mW @ TA = 25°C 5.0 mW/°C Derate above 25°C Total Device Dissipation PD 1.5 Watts @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) V(BR)CEO Vdc

1.2. bf421l_bf423l.pdf Size:47K _philips

BF423
BF423
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421L; BF423L PNP high-voltage transistors 1999 Apr 21 Product specification Supersedes data of 1997 Apr 18 Philips Semiconductors Product specification PNP high-voltage transistors BF421L; BF423L FEATURES PINNING • Low current (max. 50 mA) PIN DESCRIPTION • High voltage (max. 300 V) 1 base • Available with a higher power rating (830 mW) under 2 collector type numbers: BF423. 3 emitter APPLICATIONS • Primarily intended for telephony applications. 1 handbook, halfpage 2 2 3 DESCRIPTION 1 PNP transistor in a TO-92; SOT54 plastic package. 3 MAM285 NPN complement: BF422L. Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF421L - -300 V BF423L - -250 V VCEO collector-emitter voltage open base BF421L - -300 V BF423L - -250 V

1.3. bf421_bf423_1.pdf Size:62K _philips

BF423
BF423
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors BF421; BF423 FEATURES PINNING • Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector • Class-B video output stages in colour television and 3 emitter professional monitor equipment. DESCRIPTION 1 handbook, halfpage 2 2 PNP transistors in a TO-92 plastic package. 3 NPN complements: BF420 and BF422. 1 3 MAM285 Fig.1 Simplified outline (TO-92) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF421 --300 V BF423 --250 V VCEO collector-emitter voltage open base BF421 --300 V BF423 --250 V ICM peak collector current --100 mA Ptot total power dissipation Tamb ? 25 °C - 830 mW hFE DC cur

1.4. bf421_bf423_2.pdf Size:51K _philips

BF423
BF423
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high voltage transistors Product specification 2004 Nov 10 Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification PNP high voltage transistors BF421; BF423 FEATURES PINNING • Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector • Class-B video output stages in colour television and 3 emitter professional monitor equipment. DESCRIPTION PNP transistors in a TO-92 plastic package. 1 handbook, halfpage NPN complements: BF420 and BF422. 2 2 3 1 3 MAM285 Fig.1 Simplified outline (TO-92) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BF421 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 BF423 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF421 --300 V BF423 --250 V VCEO collector-emitter voltage open base BF421 --300 V BF4

1.5. bf421_bf423.pdf Size:48K _philips

BF423
BF423
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors BF421; BF423 FEATURES PINNING • Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector • Class-B video output stages in colour television and 3 emitter professional monitor equipment. DESCRIPTION 1 handbook, halfpage 2 2 PNP transistors in a TO-92 plastic package. 3 NPN complements: BF420 and BF422. 1 3 MAM285 Fig.1 Simplified outline (TO-92) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF421 --300 V BF423 --250 V VCEO collector-emitter voltage open base BF421 --300 V BF423 --250 V ICM peak collector current --100 mA Ptot total power dissipation Tamb ? 25 °C - 830 mW hFE DC cur

1.6. bf421_bf423.pdf Size:136K _siemens

BF423
BF423
PNP Silicon Transistors BF 421 With High Reverse Voltage BF 423 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 420, BF 422 (NPN) 2 3 1 Type Marking Ordering Code Pin Configuration Package1) 1 2 3 BF 421 – Q62702-F532 E C B TO-92 BF 423 Q62702-F496 Maximum Ratings Parameter Symbol Values Unit BF 421 BF 423 Collector-emitter voltage VCE0 – 250 V Collector-emitter voltage VCER 300 – RBE = 2.7 k Collector-base voltage VCB0 300 250 Emitter-base voltage VEB0 5 Collector current IC 50 mA Peak base current IBM 100 Total power dissipation, TC = 88 ?C Ptot 830 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ? 150 K/W Junction - case2) Rth JC ? 75 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm ? 25 mm ? 0.5 mm. 5.91 Semiconductor Group 548 BF 421 BF 423 Electrical Characteristics a

1.7. bf421_bf423.pdf Size:105K _onsemi

BF423
BF423
BF421, BF423 High Voltage Transistors PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol BF421 BF423 Unit TO-92 Collector-Emitter Voltage VCEO -300 -250 Vdc CASE 29 STYLE 14 Collector-Base Voltage VCBO -300 -250 Vdc 1 1 2 2 Emitter-Base Voltage VEBO -5.0 Vdc 3 3 STRAIGHT LEAD BENT LEAD Collector Current - Continuous IC -500 mAdc BULK PACK TAPE & REEL Collector Current - Peak ICM 100 mA AMMO PACK Total Device Dissipation (Note 1) PD mW MARKING @ TA = 25°C 830 mW/°C COLLECTOR Derate above 25°C 6.6 DIAGRAM 2 Operating and Storage Junction TJ, Tstg -55 to +150 °C BF Temperature Range 3 42x BASE THERMAL CHARACTERISTICS AYWW G G Characteristic Symbol Max Unit 1 Thermal Resistance, RqJA °C/W EMITTER Junction-to-Ambient 150 BF42x = Device Code Thermal Resistance, RqJL °C/W x = 1 or 3 Junction-to-Lead 68 A = Assembly Location Stresses exceeding Maximum Ra

1.8. bf421_bf423.pdf Size:144K _cdil

BF423
BF423
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF421 VIDEO TRANSISTORS BF423 TO-92 Plastic Package High Voltage Video Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 423 421 UNITS VCEO Collector Emitter Voltage 250 300 V VCBO Collector Base Voltage 250 300 V VEBO Emitter Base Voltage 5V IC Collector Current Continuous 500 mA PD Power Dissipation@ Ta=25?C 800 mW Derate Above 25?C 6.4 mW/?C PD Power Dissipation@ Tc=25?C 2.75 W Derate Above 25?C 22 mW/?C Tj, Tstg Operating And Storage Junction -55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) Junction to ambient 156 ?C/W Rth(j-c) Junction to case 45 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 423 421 UNITS VCEO IC=1.0mA,IB=0 Collector Emitter Voltage* >250 >300 V VCBO Collector Base Voltage IC=100µA.IE=0 >25

1.9. bf423.pdf Size:47K _kec

BF423
BF423
SEMICONDUCTOR BF423 TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. B C FEATURES High Voltage : VCEO>-300V Complementary to BF422. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -250 V Collector-Base Voltage K 0.55 MAX F F L 2.30 VCEO -250 V Collector-Emitter Voltage M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage -5 V 1. EMITTER IC DC -50 2. COLLECTOR Collector Current mA 3. BASE ICP Peak -100 PC Collector Power Dissipation 625 mW IB Base Current -50 mA TO-92 Tj Junction Temperature 150 Tstg -65 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCB=-200V, IE=0 - - -10 nA ICBO Collector Cut-off Current VCB=-200V, IE=0, Tj=150 - - -10 A I

1.10. hbf423.pdf Size:44K _hsmc

BF423
BF423
Spec. No. : HE6403 HI-SINCERITY Issued Date : 1993.03.18 Revised Date : 2003.06.18 MICROELECTRONICS CORP. Page No. : 1/4 HBF423 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................................................ -250 V VCEO Coll

See also transistors datasheet: BF422 , BF422A , BF422L , BF422P , BF422P3 , BF422S , BF422W , BF422W3 , 2N2222 , BF423A , BF423L , BF423P , BF423P3 , BF423S , BF423W , BF423W3 , BF424 .

Keywords

 BF423 Datasheet  BF423 Datenblatt  BF423 RoHS  BF423 Distributor
 BF423 Application Notes  BF423 Component  BF423 Circuit  BF423 Schematic
 BF423 Equivalent  BF423 Cross Reference  BF423 Data Sheet  BF423 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com