BF640 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BF640

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.1

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 400

Collector capacitance (Cc), pF: 0.5

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of BF640 transistor: TO72

BF640 Equivalent Transistors - Cross-Reference Search

BF640 PDF document for downloads:

1.1. cepf640_cebf640_ceff640.pdf Size:396K _cet

CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF640 200V 0.15? 19A 10V CEBF640 200V 0.15? 19A 10V CEFF640 200V 0.15? 19A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS V ±20 Drain Current-Continuous ID 19 19 d A Drain Current-Pulsed a IDM e 76 76 d A Maximum Power Dissipation @ TC = 25 C 125 40 W PD - Derate above 25 C 1.0 0.32 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R?JC 1.0 3.1 C/W Thermal Resistance, Juncti

See also transistors datasheet: BF618EA , BF618G , BF620 , BF621 , BF622 , BF623 , BF630 , BF639 , 2N2219A , BF642 , BF642P , BF642P2 , BF642W , BF642W3 , BF643 , BF643P , BF643P2 .

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