BF642 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BF642

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 300

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BF642 transistor: TO92

BF642 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: BF618G , BF620 , BF621 , BF622 , BF623 , BF630 , BF639 , BF640 , AC127 , BF642P , BF642P2 , BF642W , BF642W3 , BF643 , BF643P , BF643P2 , BF643W .

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