BF870 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BF870

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1.6

Maximum collector-base voltage |Ucb|, V: 250

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.03

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 2

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of BF870 transistor: TO202

BF870 Equivalent Transistors - Cross-Reference Search

BF870 PDF document for downloads:

1.1. bf870_bf872.pdf Size:63K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF870; BF872 PNP high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors BF870; BF872 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS • For use in class-B video output stages of colour television receivers. 2 DESCRIPTION 3 PNP transistors in a TO-202 plastic package. 1 NPN complements: BF869 and BF871. PINNING 1 2 3 PIN DESCRIPTION MBH792 1 emitter 2 collector, connected to mounting base Fig.1 Simplified outline (TO-202) and symbol. 3 base QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF870 --250 V BF872 --300 V VCEO collector-emitter voltage open base BF870 --250 V BF872 --300 V ICM peak collector current --100 mA Ptot total power dissipation Tmb ? 25 °C - 5W hFE DC current

See also transistors datasheet: BF859EA , BF860 , BF869 , BF869A , BF869BA , BF869EA , BF869S , BF869SA , C102 , BF870A , BF870BA , BF870EA , BF870S , BF870SA , BF871 , BF871A , BF871BA .

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