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BFN23 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFN23

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 250

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.02

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 1.6

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of BFN23 transistor: SOT23

BFN23 Equivalent Transistors - Cross-Reference Search

BFN23 PDF document for downloads:

1.1. bfn23.pdf Size:127K _siemens

BFN 23 PNP Silicon High-Voltage Transistor BFN 23 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BFN 22 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BFN 23 HCs Q62702-F1064 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 250 V Collector-base voltage VCB0 250 Collector-emitter voltage, RBE = 2.7 k? VCER 250 Emitter-base voltage VEB0 5 Collector current IC 50 mA Peak collector current ICM 100 Total power dissipation, TS =71 ?C Ptot 360 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 290 K/W Junction - soldering point Rth JS ? 220 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5.91 Semiconductor Group

See also transistors datasheet: BFN16 , BFN17 , BFN18 , BFN19 , BFN20 , BFN21 , BFN22 , BFN22R , BC558 , BFN23R , BFN24 , BFN25 , BFN26 , BFN27 , BFN36 , BFN37 , BFN38 .

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