BFP180 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFP180

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.03

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.004

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 4000

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BFP180 transistor: SOT23

BFP180 Equivalent Transistors - Cross-Reference Search

BFP180 PDF document for downloads:

1.1. bfp180w.pdf Size:59K _siemens

BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 180W RDs Q62702-F1500 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 4 mA Base current IB 0.5 Total power dissipation Ptot mW TS ? 126 °C 30 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 785 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFP 180W Electrical Characteristics at TA = 25°C, unless

1.2. bfp180.pdf Size:76K _siemens

BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 180 RDs Q62702-F1377 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 4 mA Base current IB 0.5 Total power dissipation Ptot mW TS ? 124 °C 30 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 875 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Nov-22-1996 BFP 180 Electrical Characteristics at TA = 25°C, unless ot

5.1. bfp181r.pdf Size:58K _siemens

BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181R RFs Q62702-F1685 1 = E 2 = C 3 = E 4 = B SOT-143R Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 mA Base current IB 2 Total power dissipation Ptot mW TS ? 75 °C 175 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 430 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Jan-21-1997 BFP 181R Electrical Characteristics at TA = 25°C, unless otherwise specifi

5.2. bfp181.pdf Size:60K _siemens

BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181 RFs Q62702-F1271 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 mA Base current IB 2 Total power dissipation Ptot mW TS ? 75 °C 175 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 430 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFP 181 Electrical Characteristics at TA = 25°C, unless otherwise specified.

5.3. bfp182w.pdf Size:58K _siemens

BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182W RGs Q62702-F1502 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation Ptot mW TS ? 91 °C 250 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 235 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFP 182W Electrical Characteristics at TA = 25°C, unless otherwise specified.

5.4. bfp182r.pdf Size:58K _siemens

BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182R RGs Q62702-F1601 1 = E 2 = C 3 = E 4 = B SOT-143R Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation Ptot mW TS ? 69 °C 250 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 325 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Jan-21-1997 BFP 182R Electrical Characteristics at TA = 25°C, unless otherwise specified.

5.5. bfp183r.pdf Size:58K _siemens

BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 183R RHs Q62702-F1594 1 = E 2 = C 3 = E 4 = B SOT-143R Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation Ptot mW TS ? 76 °C 250 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 295 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Jan-21-1997 BFP 183R Electrical Characteristics at TA = 25°C, unless otherwise speci

5.6. bfp182.pdf Size:60K _siemens

BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation Ptot mW TS ? 69 °C 250 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 325 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFP 182 Electrical Characteristics at TA = 25°C, unless otherwise specified. Pa

5.7. bfp181w.pdf Size:59K _siemens

BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181W RFs Q62702-F1501 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 mA Base current IB 2 Total power dissipation Ptot mW TS ? 91 °C 175 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 340 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Aug-30-1996 BFP 181W Electrical Characteristics at TA = 25°C, unless otherwise specifie

5.8. bfp183.pdf Size:60K _siemens

BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 183 RHs Q62702-F1382 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation Ptot mW TS ? 76 °C 250 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 295 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFP 183 Electrical Characteristics at TA = 25°C, unless otherwise specified

5.9. bfp183w.pdf Size:59K _siemens

BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 183W RHs Q62702-F1503 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation Ptot mW TS ? 58 °C 450 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 205 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFP 183W Electrical Characteristics at TA = 25°C, unless otherwise specif

See also transistors datasheet: BFN38 , BFN39 , BFP10 , BFP11 , BFP12 , BFP13 , BFP14 , BFP17 , BF199 , BFP181 , BFP181T , BFP182 , BFP182T , BFP183 , BFP183T , BFP193 , BFP194 .

Keywords