BFQ68 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFQ68

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 4.5

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 2

Maximum collector current |Ic max|, A: 0.3

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 4000

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BFQ68 transistor: TO128

BFQ68 Equivalent Transistors - Cross-Reference Search

BFQ68 PDF document for downloads:

1.1. bfq68_cnv_2.pdf Size:61K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 DESCRIPTION PINNING NPN transistor mounted in a four-lead PIN DESCRIPTION dual-emitter SOT122A envelope with 1 collector a ceramic cap. All leads are isolated fpage 4 2 emitter from the stud. Diffused 1 3 emitter-ballasting resistors and the 3 base application of gold sandwich 4 emitter metallization ensure an optimum temperature profile and excellent reliability properties. It features very 2 high output voltage capabilities. Top view MBK187 It is primarily intended for final stages in MATV system amplifiers, and is Fig.1 SOT122A. also suitable for use in low power band IV and V equipment. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCEO collector-emitter voltage open base - 18 V IC collector current -

See also transistors datasheet: BFQ63 , BFQ64 , BFQ645 , BFQ64P , BFQ65 , BFQ66 , BFQ67 , BFQ67W , 2N3906 , BFQ69 , BFQ70 , BFQ71 , BFQ72 , BFQ73 , BFQ73S , BFQ74 , BFQ75 .

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