BFR28 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFR28

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 400

Collector capacitance (Cc), pF: 0.9

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of BFR28 transistor: TO92

BFR28 Equivalent Transistors - Cross-Reference Search

BFR28 PDF document for downloads:

1.1. bfr280w.pdf Size:56K _siemens

BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 280W REs Q62702-F1494 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 mA Base current IB 1.2 Total power dissipation Ptot mW TS ? 115 °C 80 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 435 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 280W Electrical Characte

1.2. bfr280.pdf Size:56K _siemens

BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 280 REs Q62702-F1298 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 mA Base current IB 1.2 Total power dissipation Ptot mW TS ? 115 °C 80 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 425 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 280 Electrical Characterist

See also transistors datasheet: BFR20 , BFR21 , BFR22 , BFR23 , BFR24 , BFR25 , BFR26 , BFR27 , BC517 , BFR280 , BFR280W , BFR34 , BFR34A , BFR35 , BFR35A , BFR35AP , BFR35AR .

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