2N3053S Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3053S

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.7

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of 2N3053S transistor: TO5

2N3053S Equivalent Transistors - Cross-Reference Search

2N3053S PDF document for downloads:

4.1. 2n3053_40053.pdf Size:483K _rca

ÿþ

4.2. 2n3053-a.pdf Size:77K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.1. 2n3055.pdf Size:422K _rca

ÿþ

5.2. 2n3054.pdf Size:425K _rca

ÿþ

5.3. 2n3055.pdf Size:130K _motorola

Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS • Excellent Safe Operating Area COMPLEMENTARY SILICON 60 VOLTS MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Emitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Emitter Voltage VCER 70 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Base Voltage VCB 100 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Emitter–Base Voltage VEB 7 Vdc IIIIIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIII

5.4. 2n3055a_mj2955a_mj15015_mj15016.pdf Size:235K _motorola

Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or MJ2955A for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. PNP • Current–Gain — Bandwidth–Product @ IC = 1.0 Adc MJ15016* fT = 0.8 MHz (Min) – NPN IIIIIIIIIIIIIIIIIIIIIII = 2.2 MHz (Min) – PNP *Motorola Preferred Device • Safe Operating Area — Rated to 60 V and 120 V, Respectively IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII 15 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII *MAXIMUM RATINGS COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII 2N3055A MJ15015 SILI

5.5. 2n3055_mj2955.pdf Size:179K _motorola

Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS • Excellent Safe Operating Area COMPLEMENTARY IIIIIIIIIIIII IIIII IIIII III SILICON 60 VOLTS IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III IIIII III IIIII III Collector–Emitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III III

5.6. mj2955-2n3055.pdf Size:130K _motorola

Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS • Excellent Safe Operating Area COMPLEMENTARY SILICON 60 VOLTS MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Emitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Emitter Voltage VCER 70 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Base Voltage VCB 100 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Emitter–Base Voltage VEB 7 Vdc IIIIIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIII

5.7. 2n3055.pdf Size:39K _st

2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 100 V V Collector-Emitter Voltage (R = 100?)70 V CER BE VCEO Collector-Emitter Voltage (IB = 0) 60 V V Emitter-Base Voltage (I = 0) 7 V EBO C IC Collector Current 15 A IB Base Current 7 A o P Total Dissipation at T ? 25 C 115 W tot c o T Storage Temperature -65 to 200 C stg o T Max. Operating Junction Temperature 200 C j 1/4 October 1995 2N3055 THERMAL DATA o Rthj-ca se Thermal Resistance Junction-case Max 1.5 C/W o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector C

5.8. 2n3055_mj2955_2.pdf Size:90K _st

2N3055 MJ2955 Complementary power transistors Features ¦ Low collector-emitter saturation voltage ¦ Complementary NPN - PNP transistors Applications ¦ General purpose ¦ Audio Amplifier 1 2 Description TO-3 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2N3055 2N3055 TO-3 tray MJ2955 MJ2955 January 2008 Rev 7 1/7 . www.st.com 7 Absolute maximun rating 2N3055 MJ2955 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter Value Unit NPN 2N3055 PNP MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER Collector-emitter voltage (RBE = 100 ?) 70 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Collector-base voltage (IC = 0) 7V IC Collector current 15 A IB Base current 7 A PTOT Total dissipation at Tc ?25°C 115 W Tstg Storage temp

5.9. 2n3054-a.pdf Size:88K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.10. 2n3054.pdf Size:88K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.11. 2n3055a_mj15015_mj15016.pdf Size:89K _onsemi

2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters, or for inductive loads COMPLEMENTARY SILICON requiring higher safe operating area than the 2N3055. POWER TRANSISTORS Features 60, 120 VOLTS - 115, 180 WATTS • Current-Gain - Bandwidth-Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) - NPN = 2.2 MHz (Min) - PNP • Safe Operating Area - Rated to 60 V and 120 V, Respectively • Pb-Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc TO-204AA (TO-3) 2N3055A 60 CASE 1-07 MJ15015, MJ15016 120 STYLE 1 Collector-Base Voltage VCBO Vdc 2N3055A 100 MJ15015, MJ15016

5.12. 2n3055_mj2955.pdf Size:70K _onsemi

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain - hFE = 20-70 @ IC = 4 Adc • Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS • Excellent Safe Operating Area COMPLEMENTARY SILICON • Pb-Free Packages are Available* 60 VOLTS, 115 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage VCER 70 Vdc TO-204AA (TO-3) CASE 1-07 Collector-Base Voltage VCB 100 Vdc STYLE 1 Emitter-Base Voltage VEB 7 Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C PD 115 W MARKING DIAGRAM Derate Above 25°C 0.657 W/°C Operating and Storage Junction TJ, Tstg - 65 to +200 °C Temperature Range Maximum ratings are those values beyond w

5.13. 2n3055.pdf Size:16K _utc

UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector-Emitter Voltage VCEV 70 V Collector Current Ic 15 A Collector Peak Current(1) ICM 15 A Base Current IB 7 A Base Peak Current(1) IBM 15 A Total Dissipation at Ta=25°C Ptot 115 W Storage Temperature TSTG -65 to 200 °C Max. Operating Junction Temperature Tj 200 °C ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Sustaining VCEO(sus) Ic=200mA, IB=0V 60 V Voltage Collector-Emitter Sustaining Voltage VCER(sus) Ic=0.2 A, RBE=

5.14. mj15015-16_2n3055a_mj2955a.pdf Size:193K _mospec

A A A A

5.15. 2n3019_2n3057_2n3700.pdf Size:71K _microsemi

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector Current 1.0 Adc IC Total Power Dissipation @ T = +250C(1) W A 2N3019; 2N3019S 0.8 2N3057A 0.4 TO- 18* (TO-206AA) 2N3700 0.5 2N3700 2N3700UB 0.4 PT @ T = +250C(2) W C 2N3019; 2N3019S 5.0 2N3057A 1.8 2N3700 1.8 TO-46* (TO-206AB) 2N3700UB 1.16 2N3057A 0 Operating & Storage Jct Temp Range -55 to +175 C TJ, Tstg 1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for T ? +250C. A 3 PIN SURFACE MOUNT* 2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 2N3

5.16. 2n30542n3054a.pdf Size:161K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3054 2N3054A DESCRIPTION Ў¤ With TO-66 package APPLICATIONS Ў¤ Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER CONDITIONS Open emitter Open base Open collector Collector-base voltage Collector-emitter voltage Emitter-base voltage INC Collector current Base current E SEM HANG 2N3054 TC=25Ўж 2N3054A ONDU IC CTOR 90 55 7 4 2 25 VALUE UNIT V V V A A W Power dissipation Junction temperature Storage temperature 75 200 -65~200 Ўж Ўж THERMAL CHARACTERISTICS SYMBOL PARAMETER 2N3054 Rth j-C Thermal resistance junction to case 2N3054A 2.33 MAX 7.0 Ўж /W UNIT

5.17. 2n3055.pdf Size:107K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IBB Base Current 7 A PC Collector Power Dissipation@TC=25? 115 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.52 ?/W Rth j-c isc Website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3055 ELECTRI

5.18. 2n3055h.pdf Size:31K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 70 V CER VCEO Collector-Emitter Voltage 100 V V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C IB Base Current 7 A P Collector Power Dissipation@T =25? 115 W C C T Junction Temperature 200 ? J Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.52 ?/W isc Website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H ELECTRICAL CHARA

5.19. 2n3055a.pdf Size:33K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers,DC-DC converters, inverters, or for inductive loads. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEV V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C I Base Current 7 A B P Collector Power Dissipation@T =25? 115 W C C T Junction Temperature 200 ? J Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal

5.20. 2n3054.pdf Size:45K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3054 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 25W @TC= 25? APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V V Collector-Emitter Voltage 90 V CEV V Collector-Emitter Voltage 60 V CER VCEO Collector-Emitter Voltage 55 V V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 4 A C IB Base Current-Continuous 2 A P Collector Power Dissipation@T =25? 25 W C C T Junction Temperature 200 ? J Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7.0 ?/W isc Website:www.iscsemi.cn  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3054 ELECTRICAL CHARACTERISTICS

See also transistors datasheet: 2N3048 , 2N3049 , 2N3050 , 2N3051 , 2N3052 , 2N3053 , 2N3053A , 2N3053L , 9012 , 2N3053SM , 2N3054 , 2N3054A , 2N3054S , 2N3055 , 2N3055-1 , 2N3055-10 , 2N3055-2 .

Keywords