BFR90 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFR90

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.18

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 2

Maximum collector current |Ic max|, A: 0.025

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3000

Collector capacitance (Cc), pF: 0.8

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BFR90 transistor: TO51

BFR90 Equivalent Transistors - Cross-Reference Search

BFR90 PDF document for downloads:

1.1. bfr90rev.pdf Size:76K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR90/D The RF Line NPN Silicon BFR90 High-Frequency Transistor Designed primarily for use in high–gain, low–noise, small–signal amplifiers. Also used in applications requiring fast switching times. • High Current–Gain — Bandwidth Product — fT = 5.0 GHz (Typ) @ IC = 14 mA fT = 5.0 GHz @ 14 mA • Low Noise Figure — HIGH–FREQUENCY NF = 2.4 dB (Typ) @ f = 0.5 GHz TRANSISTOR NF = 3.0 dB (Typ) @ f = 1.0 GHz NPN SILICON • High Power Gain — Gmax = 18 dB (Typ) @ f = 0.5 GHz Gmax = 12 dB (Typ) @ f = 1.0 GHz CASE 317A–01, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 30 mAdc Total Device Dissipation @ TA = 25°C (1) PD 250 mW Derate above 25°C 2.0 mW/°C Storage Temperature Range Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Re

See also transistors datasheet: BFR88 , BFR88A , BFR88B , BFR88TO5 , BFR89 , BFR89A , BFR89B , BFR89TO5 , AD162 , BFR90A , BFR90B , BFR90H , BFR91 , BFR91A , BFR91H , BFR92 , BFR92A .

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