BFS481 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFS481

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.02

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 8000

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of BFS481 transistor: SOT363

BFS481 Equivalent Transistors - Cross-Reference Search

BFS481 PDF document for downloads:

1.1. bfs481.pdf Size:53K _siemens

BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fT = 8 GHz F = 1.4 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 481 RFs Q62702-F1572 1/4 = B 2/5 = E 3/6 = C SOT-363 data below is of a single transistor Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 mA Base current IB 2 Total power dissipation Ptot mW TS ? 83 °C 175 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 380 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconduct

5.1. bfs482.pdf Size:53K _siemens

BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 482 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C SOT-363 data below is of a single transistor Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation Ptot mW TS ? 81 °C 250 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 275 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor

5.2. bfs480.pdf Size:52K _siemens

BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 480 REs Q62702-F1531 1/4 = B 2/5 = E 3/6 = C SOT-363 data below is of a single transistor Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 mA Base current IB 1.2 Total power dissipation Ptot mW TS ? 112 °C 80 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 470 K/W 1) TS is measured on the collector l

5.3. bfs483.pdf Size:53K _siemens

BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFS 483 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C SOT-363 data below is of a single transistor Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation Ptot mW TS ? 40 °C 450 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 245 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Gro

See also transistors datasheet: BFS41 , BFS42 , BFS43 , BFS44 , BFS45 , BFS46 , BFS46A , BFS480 , 2N4403 , BFS482 , BFS483 , BFS50 , BFS51 , BFS55 , BFS55A , BFS57 , BFS57P .

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