BFT45 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFT45

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 250

Maximum collector-emitter voltage |Uce|, V: 250

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of BFT45 transistor: TO39

BFT45 Equivalent Transistors - Cross-Reference Search

BFT45 PDF document for downloads:

1.1. bft45_cnv_2.pdf Size:52K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFT45 PNP high-voltage transistor 1997 Apr 18 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistor BFT45 FEATURES PINNING • Low current (max. 500 mA) PIN DESCRIPTION • High voltage (max. 250 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • High voltage switching and amplification • Industrial and telephone applications. 1 handbook, halfpage 3 2 DESCRIPTION 2 PNP high-voltage transistor in a TO-39 metal package. 1 3 MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter ---250 V VCEO collector-emitter voltage open base ---250 V ICM peak collector current ---1 A Ptot total power dissipation Tcase ? 50 °C --5W hFE DC current gain IC = -10 mA; VCE = -10 V 50 - 150 Cc coll

See also transistors datasheet: BFT37 , BFT37A , BFT39 , BFT40 , BFT41 , BFT42 , BFT43 , BFT44 , BC556 , BFT47 , BFT48 , BFT49 , BFT50 , BFT51 , BFT53 , BFT54 , BFT55 .

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