BFT80
Transistor Datasheet. Parameters and Characteristics. Type Designator: BFT80
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 70
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 100
Collector capacitance (Cc), pF: 10
Forward current transfer ratio (hFE), min: 75
Noise Figure, dB: - Package of BFT80
transistor: TO39
BFT80
Equivalent Transistors - Cross-Reference Search BFT80
PDF document for downloads: PDF unavailable! See also transistors datasheet: BFT70
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. Keywords| BFT80
Datasheet | BFT80
Datenblatt | BFT80
RoHS | BFT80
Distributor | | BFT80
Application Notes | BFT80
Component | BFT80
Circuit | BFT80
Schematic | | BFT80
Equivalent | BFT80
Cross Reference | BFT80
Data Sheet | BFT80
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