BFX57I Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFX57I

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 2

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 600

Collector capacitance (Cc), pF: 1

Forward current transfer ratio (hFE), min: 66

Noise Figure, dB: -

Package of BFX57I transistor: TO12

BFX57I Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: BFX52 , BFX53 , BFX55 , BFX56 , BFX56I , BFX56II , BFX56III , BFX57 , AC128 , BFX57II , BFX57III , BFX58 , BFX58D , BFX58I , BFX58II , BFX58III , BFX59 .

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