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BFX85 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BFX85

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 12

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of BFX85 transistor: TO5

BFX85 Equivalent Transistors - Cross-Reference Search

BFX85 PDF doc:

1.1. bfx85_cnv_2.pdf Size:56K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX85 NPN switching transistor 1997 Apr 22 Product specification Supersedes data of Sepember 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistor BFX85 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 60 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • General purpose switching and amplification • Industrial applications. 1 handbook, halfpage 3 2 DESCRIPTION 2 NPN transistor in a TO-39 metal package. 1 3 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 100 V VCEO collector-emitter voltage open base - - 60 V IC collector current (DC) - - 1 A Ptot total power dissipation Tamb ? 25 °C - - 800 mW Tcase ? 100 °C - - 2.86 W hFE DC current gain IC = 150 mA; VCE = 10 V 70 142 - fT transit

See also transistors datasheet: BFX77 , BFX79 , BFX80 , BFX80DCSM , BFX81 , BFX81DCSM , BFX81DCSM-M , BFX84 , BD135 , BFX86 , BFX87 , BFX88 , BFX89 , BFX90 , BFX91 , BFX92 , BFX92A .

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