BLW76 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BLW76

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 140

Maximum collector-base voltage |Ucb|, V: 70

Maximum collector-emitter voltage |Uce|, V: 35

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 20

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 250

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of BLW76 transistor: M174

BLW76 Equivalent Transistors - Cross-Reference Search

BLW76 PDF document for downloads:

1.1. blw76.pdf Size:90K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor August 1986 Product specification Philips Semiconductors Product specification HF/VHF power transistor BLW76 mismatch conditions. Transistors are DESCRIPTION delivered in matched hFE groups. N-P-N silicon planar epitaxial 1 The transistor has a ?2" flange transistor intended for use in class-AB envelope with a ceramic cap. All or class-B operated high power leads are isolated from the flange. transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION VCE IC(ZS) f PL Gp ? d3 V A MHz W dB % dB s.s.b. (class-AB) 28 0,05 1,6 - 28 8 - 80 (P.E.P.) > 13 > 35(1) < -30 c.w. (class-B) 28 - 108 80 typ. 7,9 typ. 70 - Note 1. At 80 W P.E.P. PIN CONFIGURATION PINNING - SOT121B. PIN DESCRIPTIO

See also transistors datasheet: BLW67 , BLW68 , BLW69 , BLW70 , BLW71 , BLW72 , BLW73 , BLW75 , BC548 , BLW77 , BLW78 , BLW79 , BLW80 , BLW81 , BLW82 , BLW83 , BLW84 .

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