BSS22 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BSS22

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 12

Maximum collector-emitter voltage |Uce|, V: 12

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 125

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of BSS22 transistor: TO226

BSS22 Equivalent Transistors - Cross-Reference Search

BSS22 PDF document for downloads:

1.1. bss223pw_rev1.4.pdf Size:110K _infineon

BSS 223PW ?? ? OptiMOS?-P Small-Signal-Transistor Product Summary Feature VDS -20 V • P-Channel RDS(on) 1.2 ? • Enhancement mode ID -0.39 A • Super Logic Level (2.5 V rated) PG-SOT-323 • 150°C operating temperature 3 • Avalanche rated • dv/dt rated 2 1 VSO05561 • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Drain pin 3 Gate pin1 Type Package Tape and Reel Marking Source pin 2 BSS 223PW PG-SOT-323 H6327:3000pcs/r. X4s Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit A Continuous drain current ID TA=25°C -0.39 TA=70°C -0.31 -1.56 Pulsed drain current ID puls TA=25°C 1.4 mJ Avalanche energy, single pulse EAS ID=-0.39 A , VDD=-10V, RGS=25? -6 kV/µs Reverse diode dv/dt dv/dt IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C V Gate source voltage VGS ±12 0.25 W Power dissipation Ptot TA=25°C °C Operating and storage temperature Tj , Tstg -55... +150 IEC climatic category; DI

1.2. bss229.pdf Size:318K _infineon

BSS 229 SIPMOS? Small-Signal Transistor VDS 250 V ID 0.07 A RDS(on) 100 ? N channel Depletion mode High dynamic resistance 3 2 Available grouped in VGS(th) 1 Type Ordering Tape and Reel Pin Configuration Marking Package Code Information 1 2 3 BSS 229 Q62702-S600 E6296: 1500 pcs/reel; G D S SS229 TO-92 2 reels/carton; source first Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 250 V Drain-gate voltage, RGS = 20 k? VDGR 250 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 25 ?C ID 0.07 A Pulsed drain current, TA = 25 ?C ID puls 0.21 Max. power dissipation, TA = 25 ?C Ptot 0.63 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ?C Thermal resistance, chip-ambient RthJA ? 200 K/W (without heat sink) DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Data Sheet 1 05.99 BSS 229 Electrical Characteristics at Tj = 25 ?

See also transistors datasheet: BSS14 , BSS15 , BSS16 , BSS17 , BSS18 , BSS19 , BSS20 , BSS21 , 2N5401 , BSS23 , BSS24 , BSS25 , BSS26 , BSS27 , BSS28 , BSS29 , BSS30 .

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