BSS30 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BSS30

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 19

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BSS30 transistor: TO39

BSS30 Equivalent Transistors - Cross-Reference Search

BSS30 PDF document for downloads:

1.1. pbss305pz.pdf Size:185K _philips

PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 — 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -80 V IC collector current - - -4.5 A ICM peak collect

1.2. pbss302pd.pdf Size:142K _philips

PBSS302PD 40 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation 1.3 Applications Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -40 V [1] IC collector current - - -4 A ICM peak collector current single pulse; - - -15 A tp ? 1ms

1.3. pbss302nd.pdf Size:136K _philips

PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 — 18 February 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation 1.3 Applications Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 40 V [1] IC collector current - - 4 A ICM peak collector current single pulse; - - 15 A tp ? 1ms [

1.4. pbss305px.pdf Size:210K _philips

PBSS305PX 80 V, 4.0 A PNP low VCEsat (BISS) transistor Rev. 02 — 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NX. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -80 V IC collector current - - -4 A

1.5. pbss304nd.pdf Size:158K _philips

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 80 V [1]

1.6. pbss305nx.pdf Size:210K _philips

PBSS305NX 80 V, 4.6 A NPN low VCEsat (BISS) transistor Rev. 02 — 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PX. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 80 V IC collector current - - 4.6 A

1.7. pbss302px.pdf Size:188K _philips

PBSS302PX 20 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NX. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -20 V IC collector current - - -5.1 A ICM peak collector current single pulse; - - -10.2 A

1.8. pbss302nz.pdf Size:164K _philips

PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V IC collector current - - 5.8 A ICM peak collector current single pulse; - - 11.6 A tp ? 1ms [1] RCEsat

1.9. pbss302pz.pdf Size:163K _philips

PBSS302PZ 20 V, 5.5 A PNP low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -20 V IC collector current - - -5.5 A ICM peak collector current single pulse; - - -11 A tp ? 1ms [1] RCEsat

1.10. pbss304pd.pdf Size:129K _philips

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -80 V [1] I

1.11. pbss302nx.pdf Size:188K _philips

PBSS302NX 20 V, 5.3 A NPN low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PX. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V IC collector current - - 5.3 A ICM peak collector current single pulse; - - 10.6 A tp

1.12. pbss301pd.pdf Size:128K _philips

PBSS301PD 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 03 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301ND. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation 1.3 Applications Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -20 V [1] IC collector current - - -4 A ICM peak collector current single pulse; - - -15 A tp ? 1ms [2] RCEsat collector-emi

1.13. pbss301nd.pdf Size:128K _philips

PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 03 — 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PD. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation 1.3 Applications Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V [1] IC collector current - - 4 A ICM peak collector current single pulse; - - 15 A tp ? 1ms [2] RCEsat collector-emitte

1.14. bss308pe_rev2.02.pdf Size:494K _infineon

BSS308PE #5>?;= $=;0@/? &@99-=D Features 0 V DS S * 6;4AA8? / 80 m DS(on) max GS S A;4A68@8AF @B78 / 1 0 GS S &B:<6 ?8H8? / D4F87 ?2.0 A D S - CDBF86F87 PG?SOT?2 S + G4?<9<87 466BD7 4F V GA?8EE BF;8DI/ FB >/ -B?78D?

See also transistors datasheet: BSS22 , BSS23 , BSS24 , BSS25 , BSS26 , BSS27 , BSS28 , BSS29 , 2N2907 , BSS31 , BSS32 , BSS33 , BSS34 , BSS35 , BSS36 , BSS37 , BSS38 .

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