BSS42 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BSS42

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1.5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BSS42 transistor: TO39

BSS42 Equivalent Transistors - Cross-Reference Search

BSS42 PDF document for downloads:

1.1. pbss4240t.pdf Size:246K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat PBSS4240T (BISS) transistor FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT • High current capability VCEO collector-emitter voltage 40 V • Improved device reliability due to reduced heat ICM peak collector current 3 A generation RCEsat equivalent on-resistance <200 m? • Replacement for SOT89/SOT223 standard packaged transistors. PINNING PIN DESCRIPTION APPLICATIONS 1 base • Supply line switching circuits 2 emitter • Battery management applications 3 collector • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp handbook, halfpage drivers). 3 3 DESCRIPTION 1 NPN low VCEsat transistor in a SOT23 plastic package. PNP compleme

1.2. pbss4230t.pdf Size:251K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A PBSS4230T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT • High collector current capability IC and ICM VCEO collector-emitter voltage 30 V • High efficiency leading to less heat generation IC collector current (DC) 2 A • Reduced printed-circuit board requirements ICM peak collector current 3 A • Cost effective alternative to MOSFETs in specific RCEsat equivalent on-resistance 200 m? applications. PINNING APPLICATIONS PIN DESCRIPTION • Power management 1 base – DC/DC conversion 2 emitter – Supply line switching 3 collector – Battery charger – LCD backlighting. • Peripheral driver – Driver in low supply voltage applications (e.g. lamps and LEDs) handbook, halfpage 3 – Inductive l

1.3. pbss4240dpn.pdf Size:435K _philips

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat MAX. • High collector current capability IC and ICM SYMBOL PARAMETER UNIT NPN PNP • High collector current gain hFE at high IC VCEO emitter-collector 40 -40 V • High efficiency leading to reduced heat generation voltage • Reduced printed-circuit board area requirements. IC collector current (DC) 1.35 -1.1 A ICRP repetitive peak 2 -2 A APPLICATIONS collector current • Power management: ICM peak collector current 3 -3 A – Complementary MOSFET driver RCEsat equivalent 200 260 m? on-resistance – Dual supply line switching. • Peripheral driver: PINNING – Half and full bridge motor drivers – Multi-phase stepper motor driver. PIN DESCRIPTION 1, 4 emitter TR1

1.4. pbss4250x.pdf Size:146K _philips

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Nov 08 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 50 V, 2 A PBSS4250X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA • SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT • Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage 50 V • High collector current capability: IC and ICM IC collector current (DC) 2 A • Higher efficiency leading to less heat generation ICM peak collector current 5 A • Reduced printed-circuit board requirements. RCEsat equivalent on-resistance 160 m? PINNING APPLICATIONS • Power management PIN DESCRIPTION – DC/DC converters 1 emitter – Supply line switching 2 collector – Battery charger 3 base – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g

See also transistors datasheet: BSS34 , BSS35 , BSS36 , BSS37 , BSS38 , BSS39 , BSS40 , BSS41 , 2N3866 , BSS43 , BSS44 , BSS45 , BSS46 , BSS47 , BSS48 , BSS49 , BSS50 .

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