BSV17-16 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BSV17-16

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1.2

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of BSV17-16 transistor: TO39

BSV17-16 Equivalent Transistors - Cross-Reference Search

BSV17-16 PDF document for downloads:

5.1. bsv15_bsv16_bsv17_cnv_2.pdf Size:53K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSV15; BSV16; BSV17 PNP medium power transistors 1997 Apr 22 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP medium power transistors BSV15; BSV16; BSV17 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • General industrial applications. 1 handbook, halfpage DESCRIPTION 3 2 PNP medium power transistor in a TO-39 metal package. 2 1 3 MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BSV15 - -40 V BSV16 - -60 V BSV17 - -90 V VCEO collector-emitter voltage open base BSV15 - -40 V BSV16 - -60 V BSV17 - -80 V ICM peak collector current - -2 A Ptot total power dissipation Tamb ? 25 °C - 0.8 W Tcase ? 25 °C - 5

See also transistors datasheet: BSV15-16 , BSV15-6 , BSV16 , BSV16-10 , BSV16-16 , BSV16-6 , BSV17 , BSV17-10 , 2N60 , BSV17-6 , BSV19 , BSV21 , BSV23 , BSV23K , BSV23L , BSV23M , BSV24 .

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