2N3192 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3192

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 85

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 1

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2N3192 transistor: TO53

2N3192 Equivalent Transistors - Cross-Reference Search

2N3192 PDF document for downloads:

5.1. 2n319_2n320_2n321.pdf Size:327K _general_electric

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5.2. 2n3196.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3196 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A PC Collector power dissipation TC=25? 75 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3196 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL P

See also transistors datasheet: 2N3185 , 2N3186 , 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N222 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 .

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