BSX46 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BSX46

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.8

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of BSX46 transistor: TO39

BSX46 Equivalent Transistors - Cross-Reference Search

BSX46 PDF document for downloads:

1.1. bsx45_bsx46_bsx47.pdf Size:53K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX45; BSX46; BSX47 NPN medium power transistors 1997 Apr 23 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistors BSX45; BSX46; BSX47 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • General industrial applications. 1 DESCRIPTION handbook, halfpage 3 2 NPN medium power transistor in a TO-39 metal package. 2 1 3 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter BSX45 - - 80 V BSX46 - - 100 V BSX47 - - 120 V VCEO collector-emitter voltage open base BSX45 - - 40 V BSX46 - - 60 V BSX47 - - 80 V ICM peak collector current - - 1.5 A Ptot total power dissipation Tcase ? 25 °C - - 6.25 W

See also transistors datasheet: BSX39 , BSX40 , BSX41 , BSX44 , BSX45 , BSX45-10 , BSX45-16 , BSX45-6 , BU808DFI , BSX46-10 , BSX46-16 , BSX46-6 , BSX47 , BSX47-10 , BSX47-16 , BSX47-6 , BSX48 .

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