BU180
Transistor Datasheet. Parameters and Characteristics. Type Designator: BU180
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 320
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 8
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 200
Noise Figure, dB: - Package of BU180
transistor: TOP3
BU180
Equivalent Transistors - Cross-Reference Search BU180
PDF doc:
1.1. bu180.pdf  Size:246K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor BU180
DESCRIPTION
·Collector Current -IC= 10A
·DC Current Gain-
: hFE= 200(Min)@ IC= 5A
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for line operated switchmode applications
such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage 320 V
VCEO Collector-Emitter Voltage 200 V
VEBO Emitter-Base Voltage 8 V
IC Collector Current-Continuous 10 A
Collector Power Dissipation
PC @ TC=25? 50 W
TJ Junction Temperature 150 ?
Storage Temperature Range -55~150 ?
Tstg
isc Website:www.iscsemi.cn
www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor BU180
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-E |
1.2. bu180a.pdf Size:93K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor BU180A
DESCRIPTION
·Collector Current -IC= 10A
·DC Current Gain-
: hFE= 200(Min)@ IC= 5A
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for line operated switchmode applications
such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 200 V
VEBO Emitter-Base Voltage 8 V
IC Collector Current-Continuous 10 A
Collector Power Dissipation
PC @ TC=25? 50 W
TJ Junction Temperature 150 ?
Storage Temperature Range -55~150 ?
Tstg
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor BU180A
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustain |
See also transistors datasheet: BU143
, BU144
, BU1508AX
, BU1508DX
, BU157
, BU1706A
, BU1706AX
, BU1708AX
, BU808DFI
, BU180A
, BU181
, BU181A
, BU184
, BU189
, BU204
, BU204A
, BU205
. Keywords| BU180
Datasheet | BU180
Datenblatt | BU180
RoHS | BU180
Distributor | | BU180
Application Notes | BU180
Component | BU180
Circuit | BU180
Schematic | | BU180
Equivalent | BU180
Cross Reference | BU180
Data Sheet | BU180
Fiche Technique |
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