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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU104
BU104D .. BU921ZP
BU921ZPFI .. BUP49
BUP50 .. BUW131
BUW131A .. BUY30
BUY32-100 .. CCS2008GF
CCS2053 .. CG040D
CG040E .. CK477
CK4A .. CP500
CP501 .. CSA1316GR
CSA1357 .. CSC1740
CSC1740S .. CSD786Q
CSD786R .. D26E1
D26E2 .. D40N2
D40N3 .. D60T4040
D60T4050 .. DSL12AW
DSS20200L .. DTA143ZE
DTA143ZEA .. DTD123YK
DTD143E .. ECG16
ECG160 .. ECG52
ECG53 .. ESM4007
ESM400A .. FCX1051A
FCX1053A .. FJY4004R
FJY4005R .. FMMT918R
FMMT929 .. FX3502
FX3503 .. GD110
GD114 .. GES5818
GES5819 .. GS111B
GS111C .. GT376A
GT383A .. HE9015
HEP637 .. HS5819
HS5820 .. IDI8003
IDI8004 .. JE9112A
JE9112B .. KRA105M
KRA105S .. KRA769E
KRA769U .. KRC841E
KRC841T .. KSB1116A-Y
KSB1116S .. KSC2883-O
KSC2883-Y .. KSD5076
KSD5078 .. KSY82
KT104A .. KT325BM
KT325V .. KT617A
KT618A .. KT8154A
KT8154B .. KT903B
KT904A .. KTB688B
KTB764 .. KTD8303A9
KTD863 .. MCH3105
MCH3106 .. MJ10100
MJ10101 .. MJD44H11-1
MJD44H11T4 .. MJE5982
MJE5983 .. MMBC1009F1
MMBC1009F2 .. MMBT6428
MMBT6428L .. MP115
MP116 .. MP5130
MP5131 .. MPS3391
MPS3391A .. MPSH24
MPSH30 .. MRF947AT3
MRF947BT1 .. NA12FG
NA12FH .. NB013HU
NB013HV .. NB212XH
NB212XI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A18
RCA1A19 .. RN1701JE
RN1702 .. RN2901FS
RN2902 .. S17900
S1805 .. SDT9305
SDT9306 .. SJ5439
SJE1349 .. SRA2219S
SRA2219SF .. STC5608
STC5648 .. SZD4672
SZD5103 .. TA2514
TA2551 .. TIP146
TIP146F .. TIS53
TIS54 .. TN4142
TN4143 .. TPC6602
TPC6603 .. UN1115S
UN1116Q .. UN921M
UNR1110 .. ZT61
ZT62 .. ZTX453
ZTX454 .. ZXTPS718MC
ZXTPS720MC .. ZXTPS720MC
 
BU2508DF All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BU2508DF Transistor Datasheet. Parameters and Characteristics.

Type Designator: BU2508DF

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 45

Maximum collector-base voltage |Ucb|, V: 1500

Maximum collector-emitter voltage |Uce|, V: 700

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 90

Forward current transfer ratio (hFE), min: 7

Noise Figure, dB: -

Package of BU2508DF transistor: SOT199

BU2508DF Equivalent Transistors - Cross-Reference Search

BU2508DF PDF doc:

1.1. bu2508df.pdf Size:72K _philips

BU2508DF
BU2508DF
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Ths ? 25 ?C - 45 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.29 A - 1.0 V VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 5.0 V ICsat Collector saturation current 4.5 - A VF Diode forward

1.2. bu2508df.pdf Size:192K _inchange_semiconductor

BU2508DF
BU2508DF
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IBB Base Current- Continuous 4 A IBM Base Current-Peak 6 A Collector Power Dissipation PC @ TC=25? 45 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.8 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508DF ELECTRICAL CHARACTERIST

3.1. bu2508dw.pdf Size:54K _philips

BU2508DF
BU2508DF
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Tmb ? 25 ?C - 125 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - 1.0 V ICsat Collector saturation current f=16kHz 4.5 - A VF Diode forward voltage IF = 4.5 A 1.6 2.0 V tf Fall time ICsat = 4.5 A; f=16kHz 0.4 0.6 s

3.2. bu2508d_1.pdf Size:51K _philips

BU2508DF
BU2508DF
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Tmb ? 25 ?C - 125 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.29 A - 1.0 V VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.1 A - 5.0 V ICsat Collector saturation current 4.5 - A VF Diode forward voltage I

3.3. bu2508dx.pdf Size:73K _philips

BU2508DF
BU2508DF
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 8 A ICM Collector current peak value - 15 A Ptot Total power dissipation Ths ? 25 ?C - 45 W VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.12 A - 1.0 V ICsat Collector saturation current 4.5 - A VF Diode forward voltage IF = 4.5 A 1.6 2.0 V tf Fall time ICsat = 4.5 A; IB(end) = 1.1 A 0

3.4. bu2508d.pdf Size:139K _inchange_semiconductor

BU2508DF
BU2508DF
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IBB Base Current- Continuous 4 A IBM Base Current-Peak 6 A Collector Power Dissipation PC @ TC=25? 125 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508D ELECTRICAL CHARACTERISTI

3.5. bu2508dw.pdf Size:137K _inchange_semiconductor

BU2508DF
BU2508DF
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508DW DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IBB Base Current- Continuous 4 A IBM Base Current-Peak 6 A Collector Power Dissipation PC @ TC=25? 125 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508DW ELECTRICAL CHARACTERIS

3.6. bu2508dx.pdf Size:104K _inchange_semiconductor

BU2508DF
BU2508DF
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508DX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IBB Base Current- Continuous 4 A IBM Base Current-Peak 6 A Collector Power Dissipation PC @ TC=25? 45 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.8 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508DX ELECTRICAL CHARACTERIST

See also transistors datasheet: BU226 , BU2506DF , BU2506DX , BU2507AF , BU2508A , BU2508AF , BU2508AX , BU2508D , 2N2219 , BU2508DX , BU2520A , BU2520AF , BU2520AX , BU2520D , BU2520DF , BU2520DX , BU2522A .

Keywords

 BU2508DF Datasheet  BU2508DF Datenblatt  BU2508DF RoHS  BU2508DF Distributor
 BU2508DF Application Notes  BU2508DF Component  BU2508DF Circuit  BU2508DF Schematic
 BU2508DF Equivalent  BU2508DF Cross Reference  BU2508DF Data Sheet  BU2508DF Fiche Technique

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