BU505 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BU505

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 75

Maximum collector-base voltage |Ucb|, V: 1550

Maximum collector-emitter voltage |Uce|, V: 700

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 2.5

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 22

Noise Figure, dB: -

Package of BU505 transistor: TO220

BU505 Equivalent Transistors - Cross-Reference Search

BU505 PDF document for downloads:

1.1. bu505f.pdf Size:67K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BU505F; BU505DF Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU505F; BU505DF DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated 2 2 efficiency diode. 1 1 APPLICATIONS • Horizontal deflection circuits of MBB008 3 MBB077 3 colour television receivers. a. BU505F. b. BU505DF. PINNING 1 2 3 PIN DESCRIPTION MBC668 Front view 1 base 2 collector 3 emitter mb mounting base; electrically Fig.1 Simplified outline (SOT186) and symbols. isolated from all pins QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM collector-emitter peak voltage VBE =0 - 1500 V VCEO collector-emitter voltage open base - 700 V VCEsat co

1.2. bu505_1.pdf Size:62K _philips

DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D DESCRIPTION High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an 2 integrated efficiency diode. 2 APPLICATIONS 1 1 • Horizontal deflection circuits of colour television receivers. MBB008 3 MBB077 3 MBK106 PINNING 1 2 3 a. BU505. b. BU505D. PIN DESCRIPTION 1 base 2 collector; connected to mounting base Fig.1 Simplified outline (TO-220AB) and symbols. 3 emitter QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM collector-emitter peak voltage VBE =0 - 1500 V VCEO collector-emitter voltage open base - 700 V VCEsat collector-emitter saturation IC = 2 A; IB = 900 mA - 1V voltage VF diode forward voltage IF =

1.3. bu505.pdf Size:141K _st

BU505 High Voltage NPN Multiepitaxial Fast-Switching Transistor Features ¦ HIGH VOLTAGE CAPABILITY ¦ VERY HIGH SWITCHING SPEED ¦ HIGH RUGGEDNESS Applications ¦ ELECTRONIC BALLASTS FOR 3 FLUORESCENT LIGHTING 2 1 ¦ SWITCH MODE POWER SUPPLIES TO-220 Description The BU505 is a High Voltage NPN fastswitching transistor designed to be used in lighting application, like electronic ballast for fluorescent Internal Schematic Diagram lamps. It’s characteristics make also ideal for power supplies. Order Codes Part Number Marking Package Packing BU505 BU505 TO-220 TUBE rev.4 August 2005 1/10 www.st.com 10 1 Absolute Maximum Ratings BU505 1 Absolute Maximum Ratings Table 1. Absolute Maximum Rating Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1500 V VCEO Collector-Emitter Voltage (IB = 0) 700 V IC Collector Current 2.5 A ICM Collector Peak Current (tP < 5ms) 4A IB Base Current 1 A IBM Base Peak Current (tP < 5ms) 2A PTOT Total

1.4. bu505df.pdf Size:45K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU505DF DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High voltage,high speed Ў¤ With integrated efficiency diode APPLICATIONS Ў¤ For horizontal deflection circuits of color TV receivers. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Base current(peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25Ўж CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 2.5 4 2 4 20 150 -65~150 Ўж Ўж UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient MAX 55 UNIT K/W

1.5. bu505d.pdf Size:271K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU505D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 4 A IBB Base Current-Continuous 2 A IBM Base Current-Peak 4 A Collector Power Dissipation PC @ TC=25? 75 W TJ Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.67 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU505D ELECTRICAL CHARA

1.6. bu505.pdf Size:118K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU505 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage,high speed-switching APPLICATIONS Ў¤ For horizontal deflection circuits of color TV receivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-base voltage PARAMETER Open emitter Collector-emitter voltage INCH Base current Emitter-base voltage Collector current ANG SEM E Open base Open collector OND IC CONDITIONS TOR UC VALUE 1500 700 5 2.5 4 1 2 UNIT V V V A A A A W Ўж Ўж Collector current (peak) Base current(peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25Ўж 75 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.67 UNIT Ўж /W

See also transistors datasheet: BU426F , BU433 , BU4508AF , BU4508AX , BU4508AZ , BU4508DF , BU4508DX , BU500 , KD503 , BU505D , BU505DF , BU505F , BU506 , BU506D , BU506DF , BU506F , BU508 .

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