All Transistors. BU806 Datasheet

 

BU806 Transistor. Datasheet pdf. Equivalent

Type Designator: BU806

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

BU806 Transistor Equivalent Substitute - Cross-Reference Search

BU806 Datasheet PDF:

1.1. bu806rev.pdf Size:104K _motorola

BU806
BU806

Order this document MOTOROLA by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE This Darlington transistor is a high voltage, high speed device for use in horizontal DARLINGTON deflection circuits in TV’s and CRT’s. NPN POWER • High Voltage: VCEV = 330 or 400 V TRANSISTORS • Fast Switching Speed: 60 WATTS tc = 1.0 µs (max) 200 VOLTS • Low S

1.2. bu806_bu807.pdf Size:57K _st

BU806
BU806

BU806 BU807 ® MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR 3 2 MONOCHROME TVs 1 DESCRIPTION TO-220 The devices are silicon Epitaxial Planar NPN power transistors in Darlington configurati

1.3. bu806_bu807.pdf Size:39K _fairchild_semi

BU806
BU806

BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° ° Crt Video Displays ° ° • BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage :

1.4. bu806-f.pdf Size:41K _fairchild_semi

BU806
BU806

BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° ° Crt Video Displays ° ° • BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage :

1.5. bu806_bu807.pdf Size:54K _samsung

BU806
BU806

NPN EPITAXIAL BU806/807 SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TO-220 TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CTR VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage : BU806 VCBO 400 V 1.Base 2.Collector 3.Emitter : BU807 330

1.6. bu806.pdf Size:105K _inchange_semiconductor

BU806
BU806

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU806 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

Datasheet: BU724 , BU724A , BU724AS , BU726 , BU800 , BU800A , BU800S , BU801 , 2N3866 , BU806F , BU806FI , BU807 , BU807F , BU807FI , BU808 , BU808 , BU808DFI .

 


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