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BU808FI Transistor (IC) Datasheet. Cross Reference Search. BU808FI Equivalent

Type Designator: BU808FI

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 1400

Maximum collector-emitter voltage |Uce|, V: 700

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), ┬░C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of BU808FI transistor: ISO220

BU808FI Transistor Equivalent Substitute - Cross-Reference Search

 

BU808FI PDF:

5.1. bu808dfh.pdf Size:219K _st

BU808FI
BU808FI

BU808DFH « HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING

5.2. bu808dfi.pdf Size:73K _st

BU808FI
BU808FI

BU808DFI ? HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 LOW BASE-DRIVE REQUIREMENTS 2 DEDICATED APPLICATION NOTE AN1184 1 APPLI

5.3. bu808df1.pdf Size:71K _st

BU808FI
BU808FI

BU808DFI ? HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON WITH INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN U.L. RECOGNISED ISOWATT218 PACKAGE 3 (U.L. FILE # E81734 (N)) 2 LOW BASE-DRIVE REQUIREMENTS 1 COST AND SPACE SAVING. ISOWATT218 APPLICATIONS HORIZONTAL DEFLECT

5.4. bu808.pdf Size:75K _inchange_semiconductor

BU808FI
BU808FI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU808 DESCRIPTION ┬ĚCollector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ┬ĚHigh Switching Speed APPLICATIONS ┬ĚDesigned for use in three-phase AC motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1500 V VCEO Collector-

See also transistors datasheet: BU806FI , BU807 , BU807F , BU807FI , BU808 , BU808 , BU808DFI , BU808DXI , TIP42C , BU810 , BU824 , BU826 , BU826A , BU902 , BU902F , BU903 , BU903F .

Search Terms:

 BU808FI - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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