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BUL38D
  BUL38D
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BUL38D
  BUL38D
  BUL38D
 
BUL38D
  BUL38D
 
 
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2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
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2SC2669 .. 2SC2859-O
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2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
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BFQ42 .. BFS540
BFS55 .. BFV99
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BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
BUL38D All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BUL38D Transistor Datasheet. Parameters and Characteristics.

Type Designator: BUL38D

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 70

Maximum collector-base voltage |Ucb|, V: 800

Maximum collector-emitter voltage |Uce|, V: 450

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), ¬įC: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of BUL38D transistor: TO220

BUL38D Equivalent Transistors - Cross-Reference Search

BUL38D PDF doc:

1.1. bul38d.pdf Size:227K _st

BUL38D
BUL38D
BUL38D High voltage fast-switching NPN power transistor Features ¶ High voltage capability ¶ Low spread of dynamic parameters ¶ Minimum lot-to-lot spread for reliable operation ¶ Very high switching speed ¶ High ruggedness 3 2 ¶ Fully characterized at 125 įC 1 ¶ Integrated antiparallel collector-emitter diode TO-220 Applications ¶ Electronic transformers for halogen lamps ¶ Switch mode power supplies Figure 1. Internal schematic diagram Description The BUL38D is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps. Table 1. Device summary Order code Marking (1) Package Packaging BUL38D A BUL38D or TO-220 Tube BUL38D B 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest S

1.2. bul38d.pdf Size:67K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL38D DESCRIPTION · ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 10 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.56 ?/W Inchange Semiconduc

5.1. bul381.82.pdf Size:79K _st

BUL38D
BUL38D
BUL381D BUL382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 APPLICATIONS ELECTRONIC TRANSFORMERS FOR TO-220 HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL381D and BUL382D are manufactured INTERNAL SCHEMATIC DIAGRAM using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 5 A C ICM Collector Peak

5.2. bul381d.pdf Size:206K _st

BUL38D
BUL38D
BUL381D ģ HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL 3 2 COLLECTOR-EMITTER DIODE 1 APPLICATIONS TO-220 ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B VEBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current 5 A ICM Collector Peak

5.3. bul381-2.pdf Size:72K _st

BUL38D
BUL38D
BUL381 BUL382 ? HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATIONS ELECTRONIC BALLASTS FOR 3 2 FLUORESCENT LIGHTING 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL381 and BUL382 manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. They use a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting INTERNAL SCHEMATIC DIAGRAM applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 5 A C I Collector Peak Current (t < 5 ms) 8 A CM p IB Base Current 2 A I Base Peak Current (t < 5 ms)

5.4. bul381.pdf Size:78K _jmnic

BUL38D
BUL38D
Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381 DESCRIPTION · ·With TO-220C package ·High voltage capability ·Very high switching speed APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.78 ?/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transi

5.5. bul381d.pdf Size:80K _jmnic

BUL38D
BUL38D
Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381D DESCRIPTION · ·With TO-220C package ·High voltage capability ·Very high switching speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.78 ?/W JMnic Product

5.6. bul381.pdf Size:120K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage capability Ў¤ Very high switching speed APPLICATIONS Ў¤ Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage INCH Base current Collector-emitter voltage Emitter-base voltage GE S AN Open emitter Open base EMIC CONDITIONS OND TOR UC VALUE 800 400 9 5 8 2 4 UNIT V V V A A A A W Ўж Ўж Open collector Collector current Collector current-Peak (tp<5 ms) Base current-Peak (tp<5 ms) Total power dissipation Junction temperature Storage temperature TC=25Ўж 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance fr

5.7. bul382.pdf Size:281K _inchange_semiconductor

BUL38D
BUL38D
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL382 DESCRIPTION ¬∑Collector‚ÄďEmitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ¬∑Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ¬∑Very High Switching Speed APPLICATIONS ¬∑Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM 8 A Collector Current-peak tp<5ms IBB Base Current-Continuous 2 A IBM 4 A Base Current-peak tp<5ms Collector Power Dissipation PC TC=25? 70 W Junction Temperature 150 ? Ti Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.78 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-A isc

5.8. bul381d.pdf Size:121K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed Ў¤ Integrated antiparallel collector-emitter diode APPLICATIONS Ў¤ Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUL381D Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature GE S Open base EMIC OND TOR UC VALUE 800 400 9 5 8 2 4 UNIT V V V A A A A W Ўж Ўж Open collector Collector current-Peak (tp<5 ms) Base current-Peak (tp<5 ms) TC=25Ўж 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resist

See also transistors datasheet: BUL216 , BUL26 , BUL26D , BUL310 , BUL310PI , BUL381 , BUL381D , BUL382 , BC109C , BUL410 , BUL416 , BUL46A , BUL46B , BUL47A , BUL47B , BUL48 , BUL48A .

Keywords

 BUL38D Datasheet  BUL38D Datenblatt  BUL38D RoHS  BUL38D Distributor
 BUL38D Application Notes  BUL38D Component  BUL38D Circuit  BUL38D Schematic
 BUL38D Equivalent  BUL38D Cross Reference  BUL38D Data Sheet  BUL38D Fiche Technique

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