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BUL38D
  BUL38D
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BUL38D
  BUL38D
  BUL38D
 
BUL38D
  BUL38D
 
 
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2SC2229-O .. 2SC2434
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2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508AW
BU508AX .. BUL57PI
BUL58A .. BUV28F
BUV28FI .. BUX76
BUX77 .. C744
C760 .. CEN-A44
CEN-A45 .. CJD175
CJD176 .. CMPT5179
CMPT5401 .. CS9013E
CS9013F .. CSB858B
CSB858C .. CSD1468R
CSD1468S .. CZT4033
CZT5338 .. D38W13
D38W14 .. D44VH7
D44VH8 .. DH3467CD
DH3467CN .. DTA115TEA
DTA115TKA .. DTC143T
DTC143TCA .. DXTA92
DXTN07100BP5 .. ECG342
ECG343 .. ES3124
ES3125 .. FA1F4Z
FA1L3M .. FJV3103R
FJV3104R .. FMMT489
FMMT4890 .. FT3641
FT3642 .. GBD266
GBD267 .. GES4249
GES4250 .. GFT44/15E
GFT44/30 .. GT2906
GT305A .. HA7530
HA7531 .. HN1A02F
HN1A07F .. HUN5213
HUN5214 .. JC556A
JC556B .. KF507
KF508 .. KRA726T
KRA726U .. KRC659E
KRC659F .. KSA614-O
KSA614-R .. KSC2518
KSC2518-O .. KSD1691-O
KSD1691-Q .. KSR2006
KSR2007 .. KT315A
KT315A-1 .. KT6103A
KT6104A .. KT8123A
KT8124A .. KT847B
KT848A .. KTA1659A
KTA1660 .. KTC802E
KTC8050 .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE3520
MJE3521 .. MM4010
MM4018 .. MMBT4401T
MMBT4401W .. MMUN2132
MMUN2132L .. MP37A
MP37B .. MPQ5140
MPQ5141 .. MPS751
MPS753 .. MRF342
MRF3866R2 .. MUN5334DW1
MUN5335DW .. NB011EJ
NB011EK .. NB122H
NB122HH .. NB322F
NB322H .. NPS3702
NPS3703 .. NSS30070MR6T1G
NSS30071MR6T1G .. OC450K
OC45N .. PBSS304NZ
PBSS304PD .. PEMB14
PEMB15 .. PN4124
PN4125 .. PZT6718
PZT751 .. RN1119MFV
RN1130MFV .. RN2316
RN2317 .. RS7641
RT141 .. SD338
SD339 .. SGS112
SGS115 .. SRA2201
SRA2201E .. STA124SF
STA3073F .. SUR561J
SUR566EF .. TA1628
TA1650A .. TI619
TI620 .. TIP75
TIP75A .. TN3253
TN3390 .. TP4140
TP4141 .. UMD16N
UMD1N .. UN6123
UN6124 .. ZT1480
ZT1481 .. ZTX331K
ZTX331M .. ZXTN25020DZ
ZXTN25040DFH .. ZXTPS720MC
 
BUL38D All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BUL38D Transistor Datasheet. Parameters and Characteristics.

Type Designator: BUL38D

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 70

Maximum collector-base voltage |Ucb|, V: 800

Maximum collector-emitter voltage |Uce|, V: 450

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), ¬įC: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of BUL38D transistor: TO220

BUL38D Equivalent Transistors - Cross-Reference Search

BUL38D PDF doc:

1.1. bul38d.pdf Size:227K _st

BUL38D
BUL38D
BUL38D High voltage fast-switching NPN power transistor Features ¶ High voltage capability ¶ Low spread of dynamic parameters ¶ Minimum lot-to-lot spread for reliable operation ¶ Very high switching speed ¶ High ruggedness 3 2 ¶ Fully characterized at 125 įC 1 ¶ Integrated antiparallel collector-emitter diode TO-220 Applications ¶ Electronic transformers for halogen lamps ¶ Switch mode power supplies Figure 1. Internal schematic diagram Description The BUL38D is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps. Table 1. Device summary Order code Marking (1) Package Packaging BUL38D A BUL38D or TO-220 Tube BUL38D B 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest S

1.2. bul38d.pdf Size:67K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL38D DESCRIPTION · ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 10 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.56 ?/W Inchange Semiconduc

5.1. bul381.82.pdf Size:79K _st

BUL38D
BUL38D
BUL381D BUL382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 APPLICATIONS ELECTRONIC TRANSFORMERS FOR TO-220 HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL381D and BUL382D are manufactured INTERNAL SCHEMATIC DIAGRAM using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 5 A C ICM Collector Peak

5.2. bul381d.pdf Size:206K _st

BUL38D
BUL38D
BUL381D ģ HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL 3 2 COLLECTOR-EMITTER DIODE 1 APPLICATIONS TO-220 ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B VEBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current 5 A ICM Collector Peak

5.3. bul381-2.pdf Size:72K _st

BUL38D
BUL38D
BUL381 BUL382 ? HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATIONS ELECTRONIC BALLASTS FOR 3 2 FLUORESCENT LIGHTING 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL381 and BUL382 manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. They use a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting INTERNAL SCHEMATIC DIAGRAM applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 5 A C I Collector Peak Current (t < 5 ms) 8 A CM p IB Base Current 2 A I Base Peak Current (t < 5 ms)

5.4. bul381.pdf Size:78K _jmnic

BUL38D
BUL38D
Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381 DESCRIPTION · ·With TO-220C package ·High voltage capability ·Very high switching speed APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.78 ?/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transi

5.5. bul381d.pdf Size:80K _jmnic

BUL38D
BUL38D
Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381D DESCRIPTION · ·With TO-220C package ·High voltage capability ·Very high switching speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.78 ?/W JMnic Product

5.6. bul382.pdf Size:281K _inchange_semiconductor

BUL38D
BUL38D
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL382 DESCRIPTION ¬∑Collector‚ÄďEmitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ¬∑Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ¬∑Very High Switching Speed APPLICATIONS ¬∑Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM 8 A Collector Current-peak tp<5ms IBB Base Current-Continuous 2 A IBM 4 A Base Current-peak tp<5ms Collector Power Dissipation PC TC=25? 70 W Junction Temperature 150 ? Ti Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.78 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-A isc

5.7. bul381.pdf Size:120K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage capability Ў¤ Very high switching speed APPLICATIONS Ў¤ Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage INCH Base current Collector-emitter voltage Emitter-base voltage GE S AN Open emitter Open base EMIC CONDITIONS OND TOR UC VALUE 800 400 9 5 8 2 4 UNIT V V V A A A A W Ўж Ўж Open collector Collector current Collector current-Peak (tp<5 ms) Base current-Peak (tp<5 ms) Total power dissipation Junction temperature Storage temperature TC=25Ўж 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance fr

5.8. bul381d.pdf Size:121K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed Ў¤ Integrated antiparallel collector-emitter diode APPLICATIONS Ў¤ Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUL381D Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature GE S Open base EMIC OND TOR UC VALUE 800 400 9 5 8 2 4 UNIT V V V A A A A W Ўж Ўж Open collector Collector current-Peak (tp<5 ms) Base current-Peak (tp<5 ms) TC=25Ўж 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resist

See also transistors datasheet: BUL216 , BUL26 , BUL26D , BUL310 , BUL310PI , BUL381 , BUL381D , BUL382 , BC109C , BUL410 , BUL416 , BUL46A , BUL46B , BUL47A , BUL47B , BUL48 , BUL48A .

Keywords

 BUL38D Datasheet  BUL38D Datenblatt  BUL38D RoHS  BUL38D Distributor
 BUL38D Application Notes  BUL38D Component  BUL38D Circuit  BUL38D Schematic
 BUL38D Equivalent  BUL38D Cross Reference  BUL38D Data Sheet  BUL38D Fiche Technique

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