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BUL38D
  BUL38D
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BUL38D
  BUL38D
  BUL38D
 
BUL38D
  BUL38D
 
 
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2SC2821E .. 2SC306
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2SC3780D .. 2SC3981
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2SC4163M .. 2SC4422
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2SC5031O .. 2SC5323
2SC5324 .. 2SC569
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2SD1020O .. 2SD1218
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2SD1618S .. 2SD1803
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2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
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2SD732K .. 2SD931
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40413 .. 9013F
9013G .. AC180KL
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BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
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BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
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FMMT5089 .. FT317A
FT317B .. GA53104
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GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
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KRA557U .. KRC416
KRC416E .. KSA1241O
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KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
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MHQ2222 .. MJD117L
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MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
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MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
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NB323Z .. NPS3707
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NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
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PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
BUL38D All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BUL38D Transistor Datasheet. Parameters and Characteristics.

Type Designator: BUL38D

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 70

Maximum collector-base voltage |Ucb|, V: 800

Maximum collector-emitter voltage |Uce|, V: 450

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), ¬įC: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of BUL38D transistor: TO220

BUL38D Equivalent Transistors - Cross-Reference Search

BUL38D PDF doc:

1.1. bul38d.pdf Size:227K _st

BUL38D
BUL38D
BUL38D High voltage fast-switching NPN power transistor Features ¶ High voltage capability ¶ Low spread of dynamic parameters ¶ Minimum lot-to-lot spread for reliable operation ¶ Very high switching speed ¶ High ruggedness 3 2 ¶ Fully characterized at 125 įC 1 ¶ Integrated antiparallel collector-emitter diode TO-220 Applications ¶ Electronic transformers for halogen lamps ¶ Switch mode power supplies Figure 1. Internal schematic diagram Description The BUL38D is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps. Table 1. Device summary Order code Marking (1) Package Packaging BUL38D A BUL38D or TO-220 Tube BUL38D B 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest S

1.2. bul38d.pdf Size:67K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL38D DESCRIPTION · ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 10 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.56 ?/W Inchange Semiconduc

5.1. bul381d.pdf Size:206K _st

BUL38D
BUL38D
BUL381D ģ HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL 3 2 COLLECTOR-EMITTER DIODE 1 APPLICATIONS TO-220 ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B VEBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current 5 A ICM Collector Peak

5.2. bul381-2.pdf Size:72K _st

BUL38D
BUL38D
BUL381 BUL382 ? HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATIONS ELECTRONIC BALLASTS FOR 3 2 FLUORESCENT LIGHTING 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL381 and BUL382 manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. They use a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting INTERNAL SCHEMATIC DIAGRAM applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 5 A C I Collector Peak Current (t < 5 ms) 8 A CM p IB Base Current 2 A I Base Peak Current (t < 5 ms)

5.3. bul381.82.pdf Size:79K _st

BUL38D
BUL38D
BUL381D BUL382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 APPLICATIONS ELECTRONIC TRANSFORMERS FOR TO-220 HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL381D and BUL382D are manufactured INTERNAL SCHEMATIC DIAGRAM using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 5 A C ICM Collector Peak

5.4. bul381d.pdf Size:80K _jmnic

BUL38D
BUL38D
Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381D DESCRIPTION · ·With TO-220C package ·High voltage capability ·Very high switching speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.78 ?/W JMnic Product

5.5. bul381.pdf Size:78K _jmnic

BUL38D
BUL38D
Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381 DESCRIPTION · ·With TO-220C package ·High voltage capability ·Very high switching speed APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.78 ?/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transi

5.6. bul381d.pdf Size:121K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed Ў¤ Integrated antiparallel collector-emitter diode APPLICATIONS Ў¤ Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUL381D Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature GE S Open base EMIC OND TOR UC VALUE 800 400 9 5 8 2 4 UNIT V V V A A A A W Ўж Ўж Open collector Collector current-Peak (tp<5 ms) Base current-Peak (tp<5 ms) TC=25Ўж 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resist

5.7. bul382.pdf Size:281K _inchange_semiconductor

BUL38D
BUL38D
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL382 DESCRIPTION ¬∑Collector‚ÄďEmitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ¬∑Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ¬∑Very High Switching Speed APPLICATIONS ¬∑Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM 8 A Collector Current-peak tp<5ms IBB Base Current-Continuous 2 A IBM 4 A Base Current-peak tp<5ms Collector Power Dissipation PC TC=25? 70 W Junction Temperature 150 ? Ti Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.78 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-A isc

5.8. bul381.pdf Size:120K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage capability Ў¤ Very high switching speed APPLICATIONS Ў¤ Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage INCH Base current Collector-emitter voltage Emitter-base voltage GE S AN Open emitter Open base EMIC CONDITIONS OND TOR UC VALUE 800 400 9 5 8 2 4 UNIT V V V A A A A W Ўж Ўж Open collector Collector current Collector current-Peak (tp<5 ms) Base current-Peak (tp<5 ms) Total power dissipation Junction temperature Storage temperature TC=25Ўж 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance fr

See also transistors datasheet: BUL216 , BUL26 , BUL26D , BUL310 , BUL310PI , BUL381 , BUL381D , BUL382 , BC109C , BUL410 , BUL416 , BUL46A , BUL46B , BUL47A , BUL47B , BUL48 , BUL48A .

Keywords

 BUL38D Datasheet  BUL38D Datenblatt  BUL38D RoHS  BUL38D Distributor
 BUL38D Application Notes  BUL38D Component  BUL38D Circuit  BUL38D Schematic
 BUL38D Equivalent  BUL38D Cross Reference  BUL38D Data Sheet  BUL38D Fiche Technique

 

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