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BUL38D
  BUL38D
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  BUL38D
 
BUL38D
  BUL38D
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  BUL38D
 
 
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2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
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2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
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2SC90 .. 2SD1063S
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2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
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2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
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BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
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BF226 .. BF422
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BF848 .. BFQ268
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BSS72S .. BSX46-6
BSX47 .. BTB1580L3
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BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
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BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
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FXT449 .. GD362
GD363 .. GES929
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GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
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KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
BUL38D All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BUL38D Transistor Datasheet. Parameters and Characteristics.

Type Designator: BUL38D

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 70

Maximum collector-base voltage |Ucb|, V: 800

Maximum collector-emitter voltage |Uce|, V: 450

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), ¬įC: 200

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of BUL38D transistor: TO220

BUL38D Equivalent Transistors - Cross-Reference Search

BUL38D PDF doc:

1.1. bul38d.pdf Size:227K _st

BUL38D
BUL38D
BUL38D High voltage fast-switching NPN power transistor Features ¶ High voltage capability ¶ Low spread of dynamic parameters ¶ Minimum lot-to-lot spread for reliable operation ¶ Very high switching speed ¶ High ruggedness 3 2 ¶ Fully characterized at 125 įC 1 ¶ Integrated antiparallel collector-emitter diode TO-220 Applications ¶ Electronic transformers for halogen lamps ¶ Switch mode power supplies Figure 1. Internal schematic diagram Description The BUL38D is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps. Table 1. Device summary Order code Marking (1) Package Packaging BUL38D A BUL38D or TO-220 Tube BUL38D B 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest S

1.2. bul38d.pdf Size:67K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL38D DESCRIPTION · ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 10 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.56 ?/W Inchange Semiconduc

5.1. bul381.82.pdf Size:79K _st

BUL38D
BUL38D
BUL381D BUL382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 APPLICATIONS ELECTRONIC TRANSFORMERS FOR TO-220 HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL381D and BUL382D are manufactured INTERNAL SCHEMATIC DIAGRAM using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 5 A C ICM Collector Peak

5.2. bul381d.pdf Size:206K _st

BUL38D
BUL38D
BUL381D ģ HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL 3 2 COLLECTOR-EMITTER DIODE 1 APPLICATIONS TO-220 ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B VEBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current 5 A ICM Collector Peak

5.3. bul381-2.pdf Size:72K _st

BUL38D
BUL38D
BUL381 BUL382 ? HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATIONS ELECTRONIC BALLASTS FOR 3 2 FLUORESCENT LIGHTING 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL381 and BUL382 manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. They use a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting INTERNAL SCHEMATIC DIAGRAM applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0) 9 V I Collector Current 5 A C I Collector Peak Current (t < 5 ms) 8 A CM p IB Base Current 2 A I Base Peak Current (t < 5 ms)

5.4. bul381.pdf Size:78K _jmnic

BUL38D
BUL38D
Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381 DESCRIPTION · ·With TO-220C package ·High voltage capability ·Very high switching speed APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.78 ?/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transi

5.5. bul381d.pdf Size:80K _jmnic

BUL38D
BUL38D
Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381D DESCRIPTION · ·With TO-220C package ·High voltage capability ·Very high switching speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation TC=25? 70 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 1.78 ?/W JMnic Product

5.6. bul381.pdf Size:120K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage capability Ў¤ Very high switching speed APPLICATIONS Ў¤ Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage INCH Base current Collector-emitter voltage Emitter-base voltage GE S AN Open emitter Open base EMIC CONDITIONS OND TOR UC VALUE 800 400 9 5 8 2 4 UNIT V V V A A A A W Ўж Ўж Open collector Collector current Collector current-Peak (tp<5 ms) Base current-Peak (tp<5 ms) Total power dissipation Junction temperature Storage temperature TC=25Ўж 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance fr

5.7. bul382.pdf Size:281K _inchange_semiconductor

BUL38D
BUL38D
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL382 DESCRIPTION ¬∑Collector‚ÄďEmitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ¬∑Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ¬∑Very High Switching Speed APPLICATIONS ¬∑Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM 8 A Collector Current-peak tp<5ms IBB Base Current-Continuous 2 A IBM 4 A Base Current-peak tp<5ms Collector Power Dissipation PC TC=25? 70 W Junction Temperature 150 ? Ti Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.78 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-A isc

5.8. bul381d.pdf Size:121K _inchange_semiconductor

BUL38D
BUL38D
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed Ў¤ Integrated antiparallel collector-emitter diode APPLICATIONS Ў¤ Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUL381D Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature GE S Open base EMIC OND TOR UC VALUE 800 400 9 5 8 2 4 UNIT V V V A A A A W Ўж Ўж Open collector Collector current-Peak (tp<5 ms) Base current-Peak (tp<5 ms) TC=25Ўж 70 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resist

See also transistors datasheet: BUL216 , BUL26 , BUL26D , BUL310 , BUL310PI , BUL381 , BUL381D , BUL382 , BC109C , BUL410 , BUL416 , BUL46A , BUL46B , BUL47A , BUL47B , BUL48 , BUL48A .

Keywords

 BUL38D Datasheet  BUL38D Datenblatt  BUL38D RoHS  BUL38D Distributor
 BUL38D Application Notes  BUL38D Component  BUL38D Circuit  BUL38D Schematic
 BUL38D Equivalent  BUL38D Cross Reference  BUL38D Data Sheet  BUL38D Fiche Technique

 

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