2N3262
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N3262
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 100
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 1.5
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 150
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: - Package of 2N3262
transistor: TO5
2N3262
Equivalent Transistors - Cross-Reference Search 2N3262
PDF doc:
5.1. 2n3266.pdf  Size:259K _rca  |
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5.2. 2n3265.pdf Size:258K _rca  |
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5.3. 2n3263.pdf Size:624K _rca  |
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5.4. 2n3264.pdf Size:557K _rca  |
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See also transistors datasheet: 2N3251AUB
, 2N3252
, 2N3252S
, 2N3253
, 2N3253S
, 2N326
, 2N3260
, 2N3261
, AC125
, 2N3263
, 2N3264
, 2N3265
, 2N3266
, 2N3267
, 2N3268
, 2N327
, 2N3279
. Keywords| 2N3262
Datasheet | 2N3262
Datenblatt | 2N3262
RoHS | 2N3262
Distributor | | 2N3262
Application Notes | 2N3262
Component | 2N3262
Circuit | 2N3262
Schematic | | 2N3262
Equivalent | 2N3262
Cross Reference | 2N3262
Data Sheet | 2N3262
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