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BUX80 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BUX80

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 800

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of BUX80 transistor: TO3

BUX80 Equivalent Transistors - Cross-Reference Search

BUX80 PDF doc:

1.1. bux80-.pdf Size:62K _st

BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL HIGH FREQUENCY AND EFFICENCY 1 CONVERTERS 2 DESCRIPTION TO-3 The BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control system applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-emitter Voltage (V = 0) 800 V CES BE VCER Collector-emitter Voltage (RBE = 50?) 500 V VCEO Collector-emitter Voltage (IB = 0) 400 V VEBO Emitter-base Voltage (Ic = 0) 10 V IC Collector Current 10 A ICM Collector Peak Current 15 A I Base Current 5 A B Ptot Total Power Dissipation at Tcase ? 40 oC 100 W o Tstg Storage Temperature -65 to 150 C o Tj Max Operating Junction Temperature 150 C 1/4 June 1997 BUX80 THERMAL DATA o Rthj-case

1.2. bux80.pdf Size:115K _comset

NPN BUX80 HIGH CURRENT, HIGH SPEED, HIGH POWER HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR TRANSISTOR The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in converters, inverters, switching regulators and motor control systems applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage IB = 0 400 V VCER Collector- Emitter Voltage RBE = 50? 500 V VEBO Emitter-Base Voltage IC = 0 10 V VCES Collector-Emitter Voltage VBE = 0 800 V IC Collector Current 10 A ICM Collector Peak Current tp = 10ms 15 A IB Base Current 5 A Pt Total Power Dissipation @ TC = 40° 100 Watts TJ Junction Temperature 150 °C TStg Storage Temperature -65 to +150 °C THERMAL CHARACTERISTICS Ratings Symbol Value Unit Thermal Resistance, Junction to Case RthJC 1.1 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Test Condition(s) Symbol Ratings Min Typ Mx Unit Collector-Emitter IC=

1.3. bux80.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX80 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage Ў¤ Fast switching speed APPLICATIONS Ў¤ Switching regulators Ў¤ Motor control Ў¤ High frequency and efficiency converters PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Ў¤ ABSOLUTE MAXIMUM RATINGS(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 800 400 10 10 15 5 UNIT V V V A A A W Ўж Ўж Open collector Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25Ўж 100 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.1 UNIT Ўж /W

See also transistors datasheet: BUX75 , BUX76 , BUX77 , BUX77A , BUX77A-220M , BUX77-SM , BUX78 , BUX78-SM , 2N1711 , BUX80/4 , BUX80/5 , BUX80/6 , BUX80/7 , BUX81 , BUX81/9 , BUX82 , BUX82/4 .

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