BUY56-10
Transistor Datasheet. Parameters and Characteristics. Type Designator: BUY56-10
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 60
Maximum collector-base voltage |Ucb|, V: 250
Maximum collector-emitter voltage |Uce|, V: 160
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 10
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 10
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 63
Noise Figure, dB: - Package of BUY56-10
transistor: TO3
BUY56-10
Equivalent Transistors - Cross-Reference Search BUY56-10
PDF document for downloads: PDF unavailable! See also transistors datasheet: BUY53A
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. Keywords| BUY56-10
Datasheet | BUY56-10
Datenblatt | BUY56-10
RoHS | BUY56-10
Distributor | | BUY56-10
Application Notes | BUY56-10
Component | BUY56-10
Circuit | BUY56-10
Schematic | | BUY56-10
Equivalent | BUY56-10
Cross Reference | BUY56-10
Data Sheet | BUY56-10
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