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C100 Transistor (IC) Datasheet. Cross Reference Search. C100 Equivalent

Type Designator: C100

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.75

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V:

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of C100 transistor: TO106

C100 Transistor Equivalent Substitute - Cross-Reference Search

C100 PDF:

1.1. 2sc1008-g-o-y-r.pdf Size:430K _update

C100
C100

2SC1008-R MCC 2SC1008-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1008-Y CA 91311 Phone: (818) 701-4933 2SC1008-G Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Epitaxial Transistor

1.2. msc1000.pdf Size:100K _st

C100
C100

MSC1000M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .RUGGEDIZED VSWR :1 ? .INPUT MATCHING .LOW THERMAL RESISTANCE .CLASS A OPERATION .P 0.6 W MIN. WITH 10.8 dB GAIN OUT = .280 2LFL (S058) epoxy sealed ORDER CODE BRANDING MSC1000M 1000M PIN CONNECTION DESCRIPTION The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geo- metry specifically des

1.3. msc1004m.pdf Size:44K _st

C100
C100

MSC1004M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .1025 - 1150 MHz .RUGGEDIZED VSWR ?:1 .INTERNAL INPUT MATCHING .LOW THERMAL RESISTANCE .P 4.0 W MIN. WITH 9.0 dB GAIN OUT = .280 2LFL (SO68) epoxy sealed ORDER CODE BRANDING MSC1004M 1004M PIN CONNECTION DESCRIPTION The MSC1004M is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output appl

1.4. msc1000m.pdf Size:98K _st

C100
C100

MSC1000MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .RUGGEDIZED VSWR :1 ? .INPUT MATCHING .LOW THERMAL RESISTANCE .CLASS A OPERATION .P 0.6 W MIN. WITH 10.8 dB GAIN OUT = .280 4LSL (S053) epoxy sealed ORDER CODE BRANDING MSC1000MP 1000MP PIN CONNECTION DESCRIPTION The MSC1000MP is a Class A, common emitter transistor with an emitter ballasted Matrix geo- metry specifically

1.5. msc1004mp.pdf Size:42K _st

C100
C100

MSC1004MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .1025 - 1150 MHz .RUGGEDIZED VSWR ?:1 .INTERNAL INPUT MATCHING .LOW THERMAL RESISTANCE .P 4.0 W MIN. WITH 9.0 dB GAIN OUT = .280 4LFL (SO51) epoxy sealed ORDER CODE BRANDING MSC1004MP 1004MP PIN CONNECTION DESCRIPTION The MSC1004MP is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output

1.6. ksc1008.pdf Size:149K _fairchild_semi

C100
C100

September 2006 KSC1008 tm NPN Epitacial Silicon Transistor Features Low frequency amplifier medium speed switching. High Collector-Base Voltage : VCBO=80V. Collector Current : IC=700mA Collector Power Dissipation : PC=800mW TO-92 Suffix -C means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix -C means Side Collector (1.Emitter 2.Base 3.Collector) 1 2 3 KSC1

1.7. ksc1009.pdf Size:37K _fairchild_semi

C100
C100

KSC1009 High Voltage Amplifier High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ra

1.8. irgc100b120k.pdf Size:15K _international_rectifier

C100
C100

PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Mot

1.9. irgc100b120u.pdf Size:15K _international_rectifier

C100
C100

PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor C

1.10. irgc100b120kb.pdf Size:43K _international_rectifier

C100
C100

1.11. irgc100b120ub.pdf Size:43K _international_rectifier

C100
C100

1.12. 2sc1009a.pdf Size:325K _nec

C100
C100

1.13. bsc100n03msg_rev1.16.pdf Size:677K _infineon

C100
C100

% ! % D %0<40= #:A0< "% & #<:/?.> %?88,;53F;A@ ) AF74AA= 0" +* ' D n) m x G 0 1 S 'AI !* ( 8AD #;9: !D7CG7@5K .( +. G 44 S 3H3>3@5:7 F7EF76 D G? D ON? S ) 5:3@@7> S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD F:7D?3>

1.14. bsc100n10nsfrev2.08.pdf Size:654K _infineon

C100
C100

% ! !% D #:A0< &<,9=4=>:< #<:/?.> %?88,3I 1@@<931D9?>C 1 m D n) m x Q ( @D9=9J54 6?B 43 43 3?>F5BC9?> D Q ' 381>>5< >?B=1< <5F5< G? D ON? Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) Q .5BI B5C9CD1>35 D n) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B7

1.15. bsc100n06ls3_rev2.2.pdf Size:585K _infineon

C100
C100

pe % ! % TM #:A0< &<,9=4=>:< #<:/?.> %?88,:K65 E649?@=@8J 7@C 4@?G6CE6CD D R I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) R -FA6C:@C E96C>2= C6D:DE2?46 R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D R "2=

1.16. bsc100n03ls_rev1.6.pdf Size:689K _infineon

C100
C100

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m x 44 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 , @"-

1.17. mc100el1648.pdf Size:215K _onsemi

C100
C100

MC100EL1648 5 V ECL Voltage Controlled Oscillator Amplifier Description The MC100EL1648 is a voltage controlled oscillator amplifier that requires an external parallel tank circuit consisting of the inductor (L) http://onsemi.com and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator (VCO). MARKING This device

1.18. 2sc1008.pdf Size:78K _secos

C100
C100

2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Base ?Collector J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G B A 4.40 4.70

1.19. inc1001ac1.pdf Size:119K _isahaya

C100
C100

INC1001AC1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT:mm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini package for easy mounting ・High collector current(IC=500mA) ② ③ ・Low coll

1.20. csa709_csc1009.pdf Size:188K _cdil

C100
C100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNP CSC1009 NPN TO-92 CBE High Voltage Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C ) DESCRIPTION SYMBOL CSA709 CSC1009 UNIT Collector -Base Voltage VCBO 160 160 V Collector -Emitter Voltage VCEO 150 140 V Emitter -Base Voltage VEBO 8.0 8.0 V

1.21. c100_d100.pdf Size:82K _cdil

C100
C100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS C100 PNP D100 NPN TO-92 Plastic Package E CB These are complementary transistors for medium power voltage and current amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Volt

1.22. csc1008_csa708.pdf Size:217K _cdil

C100
C100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS CSC1008 NPN CSA708 PNP TO-92 CBE Low Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 60 V Emitter -Base Voltage VEBO 8.0

1.23. 2sc1008.pdf Size:352K _hua-yuan

C100
C100

??????????? DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR(NPN ) TO92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W(Tamb=25?) 2. BASE Collector current 3. COLLECTOR ICM : 0.7 A Collector-base voltage 1 2 3 V(BR)CBO : 80 V Operating and storage junct

1.24. ktc1003.pdf Size:449K _kec

C100
C100

SEMICONDUCTOR KTC1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E Large Collector Current Capability. C _ 2.70 0.3 + D 0.76+0.09/-0.05 Large Collector Power Dissipation Capability. _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6

1.25. ktc1008.pdf Size:74K _kec

C100
C100

SEMICONDUCTOR KTC1008 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to KTA708. D 0.45 E 1.00 F 1.27

1.26. ktc1006.pdf Size:73K _kec

C100
C100

SEMICONDUCTOR KTC1006 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR CB TRANSCEIVER TX DRIVER APPLICATION. B D FEATURES Recommended for Driver Stage Application of AM 4W Transmitter. DIM MILLIMETERS P High Power Gain. DEPTH:0.2 A 7.20 MAX Wide Area of Safe Operation. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF MAXIMUM RATINGS (Ta=2

1.27. mpmc100b120rh.pdf Size:1188K _igbt

C100
C100

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip’s IGBT Module 7DM-2 package  BV = 1200V CES  Low Conduction Loss : V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and  Fast & Soft Anti-Parallel FWD switching noise in high frequency power  Short circuit rated : Min. 10us at TC=100℃  Isolation Type

1.28. sigc100t65r3e.pdf Size:128K _igbt

C100
C100

 SIGC100T65R3E IGBT3 Chip Features: Recommended for: • 650V Trench & Field Stop technology • power modules • low VCE(sat) C • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient • easy paralleling G E • Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC100T65R

1.29. sigc100t60r3.pdf Size:127K _igbt

C100
C100

 SIGC100T60R3E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology • power module C • low VCE(sat) • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

1.30. sigc100t60r3e.pdf Size:127K _igbt

C100
C100

 SIGC100T60R3E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology • power module C • low VCE(sat) • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • easy paralleling E Chip Type VCE IC Die Size Package SIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

1.31. irgc100b60ub.pdf Size:34K _igbt_a

C100
C100

PD - 94716 IRGC100B60UB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=100A • Low VCE(on) VCE(on) typ. = 2.8V • 10µs Short Circuit Capability • Square RBSOA @ IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient UPS IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for UPS and Welding Applications E 150mm Waf

1.32. irgc100b60kb.pdf Size:79K _igbt_a

C100
C100

PD - 94618A IRGC100B60KB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=100A • Low VCE(on) VCE(on) typ.=1.9V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Control Applications E

1.33. irgc100b120kb.pdf Size:43K _igbt_a

C100
C100



1.34. igc100t65t8rm.pdf Size:78K _igbt_a

C100
C100

IGC100T65T8RM IGBT3 Chip Medium Power Features: Recommended for:  650V Trench & Field Stop technology  power modules C  high short circuit capability, self limiting short circuit current  positive temperature coefficient Applications:  easy paralleling  drives G  Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC100T6

1.35. irgc100b120ub.pdf Size:94K _igbt_a

C100
C100

PD - 93873B IRGC100B120UB Die in Wafer Form 1200V Features C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A • Low VCE(on) VCE(on) typ.= 3.1V @ • 10µs Short Circuit Capability IC(nom) @ 25°C • Square RBSOA • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated E • Benchmark Efficiency above 20KHz 150mm Wafer •

1.36. 2sc1008.pdf Size:346K _wietron

C100
C100

WEITRON 2SC1008 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25°C Parameter Symbol Value Units Collector-Base Voltage V VCBO 80 A Collector Current ICM 0.7 Power Dissipation PCM 0.8 W -55 to +150 Junction Temperature TJ °C -55 to +150 Tstg Storage Temperature °C ELECTRICAL CHARACTERIS

1.37. ftc1008.pdf Size:172K _first_silicon

C100
C100

SEMICONDUCTOR FTC1008 TECHNICAL DATA TO – 92 FTC1008 TRANSISTOR (NPN) 1. EMITTER 2. BASE FEATURES 3. COLLECTOR General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current 700 mA PC Col

1.38. 2sc1009.pdf Size:1663K _kexin

C100
C100

SMD Type Transistors NPN Transistors 2SC1009 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto

See also transistors datasheet: BUYP54 , BVW90 , BVX18A , C055 , C055P , C066 , C066P , C1 , BF494 , C1001 , C1002 , C1003 , C1004 , C101 , C102 , C103 , C106 .

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