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C1001 Transistor (IC) Datasheet. Cross Reference Search. C1001 Equivalent

Type Designator: C1001

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V:

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 20

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of C1001 transistor: TO61

C1001 Transistor Equivalent Substitute - Cross-Reference Search

C1001 PDF:

1.1. inc1001ac1.pdf Size:119K _isahaya

C1001
C1001

INC1001AC1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT:mm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini package for easy mounting ・High collector current(IC=500mA) ② ③ ・Low coll

See also transistors datasheet: BVW90 , BVX18A , C055 , C055P , C066 , C066P , C1 , C100 , TIP41 , C1002 , C1003 , C1004 , C101 , C102 , C103 , C106 , C112 .

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 C1001 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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