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C101 Transistor (IC) Datasheet. Cross Reference Search. C101 Equivalent

Type Designator: C101

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V:

Maximum emitter-base voltage |Ueb|, V:

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 0.4

Collector capacitance (Cc), pF: 50

Forward current transfer ratio (hFE), min: 9

Noise Figure, dB: -

Package of C101 transistor: TO5

C101 Transistor Equivalent Substitute - Cross-Reference Search

C101 PDF:

1.1. rc101c.pdf Size:82K _sanyo

C101
C101

Ordering number:EN4775 PNP/NPN Epitaxial Planar Silicon Transistors RA101C/RC101C Switching Applications (with Bias Resistances) Features Package Dimensions On-chip bias resistances (R1=47k? , R2=47k? ). unit:mm Compact package (CP). 2018B [RA101C/RC101C] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter ( ) : RA101C 3 : Collector SANYO : CP Specification

1.2. krc101_6s.pdf Size:391K _kec

C101
C101

SEMICONDUCTOR KRC101S~KRC106S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.

1.3. krc101m-106m.pdf Size:426K _kec

C101
C101

SEMICONDUCTOR KRC101M~KRC106M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX ·Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00

1.4. krc101-106.pdf Size:401K _kec

C101
C101

SEMICONDUCTOR KRC101~KRC106 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H

1.5. mtc1016s6r.pdf Size:356K _cystek

C101
C101

Spec. No. : C392S6R Issued Date : 2013.08.01 CYStech Electronics Corp. Revised Date : Page No. : 1/ 12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTC1016S6R BVDSS 20V -20V ID 0.82A -0.57A RDSON(typ.) @VGS=(-)4.5V 0.30Ω 0.61Ω Features RDSON(typ.) @VGS=(-)2.5V 0.43Ω 1.00Ω • Low on-resistance RDSON(typ.) @VGS=(-)1.8V 0.63Ω 1.64Ω • ESD protec

1.6. dtc101-dtc108_dtc110-dtc112_dtc114_dtc117_dtc123_dtc124.pdf Size:282K _first_silicon

C101
C101

DTC 101 ~ 108 SEMICONDUCTOR DTC 110 ~ 112 / 114 /117 TECHNICAL DATA DTC 123 / 124 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bi

1.7. krc101s-106s.pdf Size:2134K _kexin

C101
C101

SMD Type Transistors NPN Transistors KRC101S ~ KRC106S SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● With Built-in Bias Resistors. ● Simplify Circuit Design. 1 2 ● Reduce a Quantity of Parts and Manufacturing Process. +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.IN(B) 2.COMMON(E) 3.OUT(C) BIAS RESISTOR VALUES TYPE NO. R1(k ) R2(k ) OUT KRC101S

See also transistors datasheet: C066 , C066P , C1 , C100 , C1001 , C1002 , C1003 , C1004 , BC237 , C102 , C103 , C106 , C112 , C1-12 , C118 , C119 , C12-28 .

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