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C102 Transistor (IC) Datasheet. Cross Reference Search. C102 Equivalent

Type Designator: C102

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 0.8

Collector capacitance (Cc), pF: 50

Forward current transfer ratio (hFE), min: 13

Noise Figure, dB: -

Package of C102 transistor: TO5

C102 Transistor Equivalent Substitute - Cross-Reference Search

 

C102 PDF:

1.1. 2sc1027.pdf Size:160K _jmnic

C102
C102

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1027 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute ma

1.2. ktc1027.pdf Size:79K _kec

C102
C102

SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE Complementary to KTA1023. DIM MILLIMETERS P DEPTH:0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHA RACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 120 V H 0.55 MAX FF _ J 14.00 + 0.50 VCEO

1.3. ktc1026.pdf Size:89K _kec

C102
C102

SEMICONDUCTOR KTC1026 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. B D FEATURES High Voltage : VCEO=180V. DIM MILLIMETERS P High DC Current Gain. DEPTH:0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX MAXIMUM RATINGS (Ta=25 ) H 0.55 MAX FF _ J 14.00 + 0.50 CHARACT

1.4. ktc1020.pdf Size:72K _kec

C102
C102

SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES Excellecnt hFE Linearity : hFE(2)=25Min. : VCE=6V, IC=400mA. DIM MILLIMETERS O A 3.20 MAX 1 Watt Amplifier Application. H M B 4.30 MAX C 0.55 MAX Complementary to KTA1021. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX J 1.0

1.5. 2sc1027.pdf Size:113K _inchange_semiconductor

C102
C102

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1027 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC convertor Ў¤ General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SY

1.6. ktc1027.pdf Size:45K _wietron

C102
C102

KTC1027 WEITRON NPN Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25? unless otherwise noted) value Parameter Symbol Units Collector-Base Voltage VCBO 120 V 120 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage VEBO 0.8 A Collector Current -Continuous IC Collector Power Dissipation PC 0.75 W R?JA Thermal Resistance From Junct

1.7. ftc1027.pdf Size:329K _first_silicon

C102
C102

SEMICONDUCTOR FTA1027 TECHNICAL DATA FTC1027 TRANSISTOR (NPN) B FEATURES Complementary to FTA1023 High Voltage Applications E DIM MILLIMETERS A 8.2 MAX D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) B 5.1 MAX C 1.58 MAX D 0.55 MAX E 0.7 TYP F 1.27 TYP G 2.54 TYP F H 14.20 MAX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) G J 0.45 MAX L 4.10 MAX Symbol

See also transistors datasheet: C066P , C1 , C100 , C1001 , C1002 , C1003 , C1004 , C101 , MJE13005 , C103 , C106 , C112 , C1-12 , C118 , C119 , C12-28 , C1-28 .

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