All Transistors. C118 Datasheet

 

C118 Transistor. Datasheet pdf. Equivalent

Type Designator: C118

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO5

C118 Transistor Equivalent Substitute - Cross-Reference Search

C118 PDF doc:

1.1. bsy34_sc116_sc117_sc118_sc119_sc206_sc207_sc236_sc237_sc238_sc239_sc307_sc308_sc309.pdf Size:123K _update

C118
C118



1.2. fc118.pdf Size:76K _sanyo

C118
C118

Ordering number:EN3116 FC118 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2067 ing efficiency greatly. [FC118] The FC118 is formed with two chips, being equiva- lent to the 2SC4577, placed in

1.3. ksc1187.pdf Size:48K _fairchild_semi

C118
C118

KSC1187 TV 1st, 2nd Picture IF Amplifier (Forward AGC) High Current Gain Bandwidth Product : fT=700MHz High Power Gain : GPE=24dB (TYP.) at f=45MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO

1.4. bsc118n10nsrev1.08_pdf.pdf Size:439K _infineon

C118
C118

BSC118N10NS G OptiMOS2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 11.8 m? DS(on),max Excellent gate charge x R product (FOM) DS(on) I 71 A D Very low on-resistance R DS(on) 150 C operating temperature PG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency

1.5. krc118m.pdf Size:437K _kec

C118
C118

SEMICONDUCTOR KRC116M~KRC122M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES ·With Built-in Bias Resistors. DIM MILLIMETERS O ·Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX ·Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50

1.6. 2sc1187.pdf Size:73K _usha

C118
C118

Transistors 2SC1187

1.7. 2sc1185.pdf Size:127K _inchange_semiconductor

C118
C118

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1185 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and

1.8. dtc118.pdf Size:438K _first_silicon

C118
C118

SEMICONDUCTOR DTC118 TECHNICAL DATA NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network OUT • Applications Inverter, Interface, Driver GND • Features IN 1) Built-in bias resistors enable the configuration of an SOT-23 inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resi

Datasheet: C1003 , C1004 , C101 , C102 , C103 , C106 , C112 , C1-12 , 9015 , C119 , C12-28 , C1-28 , C150 , C155 , C155P , C166 , C166P .

 


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