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C119 Transistor (IC) Datasheet. Cross Reference Search. C119 Equivalent

Type Designator: C119

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc), W: 0.25

Maximum Collector-Base Voltage |Vcb|, V: 12

Maximum Collector-Emitter Voltage |Vce|, V: 6

Maximum Emitter-Base Voltage |Veb|, V:

Maximum Collector Current |Ic max|, A: 0.05

Max. Operating Junction Temperature (Tj), °C: 150

Transition Frequency (ft), MHz: 1

Collector Capacitance (Cc), pF: 50

Forward Current Transfer Ratio (hFE), min: 25

Noise Figure, dB: -

Package: TO5

C119 Transistor Equivalent Substitute - Cross-Reference Search

C119 PDF:

1.1. bsy34_sc116_sc117_sc118_sc119_sc206_sc207_sc236_sc237_sc238_sc239_sc307_sc308_sc309.pdf Size:123K _update

C119
C119



1.2. fc119.pdf Size:166K _sanyo

C119
C119

Ordering number:EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2068 ing efficiency greatly. [FC119] The FC119 is formed with two chips, being equiva- lent to the 2SC2814,

1.3. bsc119n03s_rev1.91_g.pdf Size:635K _infineon

C119
C119

% ! % D #:A0< &<,9=4=>:< #<:/?.> %?88,:J65 D649?@=@8I 7@B ?@D63@@< 4@?F6BD6BC A D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C PG?TDSON?8 Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' DS(on) Q /6BI =@G @? B6C:CD2?46 DS(on) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3

1.4. 2sc1195.pdf Size:142K _jmnic

C119
C119

JMnic Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absol

1.5. krc119m.pdf Size:437K _kec

C119
C119

SEMICONDUCTOR KRC116M~KRC122M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES ·With Built-in Bias Resistors. DIM MILLIMETERS O ·Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX ·Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50

1.6. krc119s.pdf Size:349K _kec

C119
C119

SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E ·With Built-in Bias Resistors. L B L DIM MILLIMETERS ·Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.9

1.7. 2sc1195.pdf Size:113K _inchange_semiconductor

C119
C119

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol D

1.8. dtc119.pdf Size:207K _first_silicon

C119
C119

SEMICONDUCTOR DTC119 TECHNICAL DATA NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver • Features OUT 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input GND resistors (see equivalent circuit). IN 2) The bias resistors consist of thin-film resistors wi

See also transistors datasheet: C1004 , C101 , C102 , C103 , C106 , C112 , C1-12 , C118 , 2SC1740 , C12-28 , C1-28 , C150 , C155 , C155P , C166 , C166P , C168 .

Search Terms:

 C119 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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