CA3081M Transistor Datasheet. Parameters and Characteristics.

Type Designator: CA3081M

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.75

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 16

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of CA3081M transistor: PLCC20

CA3081M Equivalent Transistors - Cross-Reference Search

CA3081M PDF document for downloads:

4.1. ca3081.pdf Size:26K _harris_semi

CA3081, CA3082 S E M I C O N D U C T O R General Purpose High Current N-P-N Transistor Arrays May 1994 March 1993 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current (to 100mA) silicon n-p-n transistors on a common monolithic substrate. The • CA3082 - Common Collector Array CA3081 is connected in a common emitter configuration and the CA3082 is connected in a common collector configuration. • Directly Drive Seven Segment Incandescent Displays and Light Emitting Diode (LED) Display The CA3081 and CA3082 are capable of directly driving seven segment displays, and light emitting diode (LED) displays. These • 7 Transistors Permit a Wide Range of types are also well suited for a variety of other drive applications, Applications in Either a Common Emitter including relay control and thyristor firing. (CA3081) or Common Collector (CA3082) Configuration Ordering Information • High IC 100mA Max PART TEMPERATURE • Low VCES

5.1. ca3083.pdf Size:23K _harris_semi

S E M I C O N D U C T O R CA3083 General Purpose High Current N-P-N Transistor Array March 1993 Features Description • High IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Max The CA3083 is a versatile array of five high current (to 100mA) n-p-n transistors on a common monolithic substrate. • Low VCE sat (at 50mA) . . . . . . . . . . . . . . . . . . . 0.7V Max In addition, two of these transistors (Q1 and Q2) are matched at low current (i.e. 1mA) for applications in which offset • Matched Pair (Q1 and Q2) parameters are of special importance. - VIO (VBE Matched) . . . . . . . . . . . . . . . . . . . . . . ±5mV Max - IIO (at 1mA) . . . . . . . . . . . . . . . . . . . . . . . . . 2.5µA Max Independent connections for each transistor plus a separate terminal for the substrate permit maximum flexibility in circuit • 5 Independent Transistors Plus Separate Substrate design. Connection Applications Ordering Information • Signal Processing and Switchin

5.2. ca3086.pdf Size:31K _harris_semi

S E M I C O N D U C T O R CA3086 General Purpose N-P-N Transistor Array March 1993 Applications Description • Three Isolated Transistors and One Differentially Con- The CA3086 consists of five general-purpose silicon n-p-n nected Transistor Pair For Low-Power Applications transistors on a common monolithic substrate. Two of the from DC to 120 MHz transistors are internally connected to form a differentially connected pair. • General-Purpose Use in Signal Processing Systems Operating in the DC to 190MHz Range The transistors of the CA3086 are well suited to a wide vari- ety of applications in low-power systems at frequencies from • Temperature Compensated Amplifiers DC to 120MHz. They may be used as discrete transistors in conventional circuits. However, they also provide the very • See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array”' for Sug- significant inherent advantages unique to integrated circuits, such as compactness, eas

See also transistors datasheet: C962 , C972 , C982 , CA3081 , CA3081EX , CA3081F , CA3081F/3 , CA3081FX , AC127 , CA3082 , CA3082F , CA3082M , CA3250E , CA3250F , CA3251E , CA3251F , CB1F4 .

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