CDQ10001 Transistor Datasheet. Parameters and Characteristics.

Type Designator: CDQ10001

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 1

Maximum collector current |Ic max|, A: 0.025

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 6

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of CDQ10001 transistor: TO22

CDQ10001 Equivalent Transistors - Cross-Reference Search

CDQ10001 PDF document for downloads:

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See also transistors datasheet: CD98 , CD982 , CDC8002 , CDC9002 , CDN055 , CDN368 , CDN369 , CDP055 , KT805AM , CDQ10002 , CDQ10003 , CDQ10004 , CDQ10005 , CDQ10006 , CDQ10007 , CDQ10008 , CDQ10009 .

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