CDQ10019
Transistor Datasheet. Parameters and Characteristics. Type Designator: CDQ10019
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 15
Maximum collector-emitter voltage |Uce|, V: 15
Maximum emitter-base voltage |Ueb|, V: 2
Maximum collector current |Ic max|, A: 0.025
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 30
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 30
Noise Figure, dB: - Package of CDQ10019
transistor: TO5
CDQ10019
Equivalent Transistors - Cross-Reference Search CDQ10019
PDF document for downloads: PDF unavailable! See also transistors datasheet: CDQ10011
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. Keywords| CDQ10019
Datasheet | CDQ10019
Datenblatt | CDQ10019
RoHS | CDQ10019
Distributor | | CDQ10019
Application Notes | CDQ10019
Component | CDQ10019
Circuit | CDQ10019
Schematic | | CDQ10019
Equivalent | CDQ10019
Cross Reference | CDQ10019
Data Sheet | CDQ10019
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