CDQ10025 Transistor Datasheet. Parameters and Characteristics.

Type Designator: CDQ10025

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 2

Maximum collector current |Ic max|, A: 0.025

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 18

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of CDQ10025 transistor: TO5

CDQ10025 Equivalent Transistors - Cross-Reference Search

CDQ10025 PDF document for downloads:

PDF unavailable!

See also transistors datasheet: CDQ10017 , CDQ10018 , CDQ10019 , CDQ10020 , CDQ10021 , CDQ10022 , CDQ10023 , CDQ10024 , 2N3904 , CDQ10026 , CDQ10027 , CDQ10032 , CDQ10033 , CDQ10034 , CDQ10035 , CDQ10036 , CDQ10037 .

Keywords