CDQ10058
Transistor Datasheet. Parameters and Characteristics. Type Designator: CDQ10058
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 5
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 100
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: - Package of CDQ10058
transistor: TO5
CDQ10058
Equivalent Transistors - Cross-Reference Search CDQ10058
PDF document for downloads: PDF unavailable! See also transistors datasheet: CDQ10049
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. Keywords| CDQ10058
Datasheet | CDQ10058
Datenblatt | CDQ10058
RoHS | CDQ10058
Distributor | | CDQ10058
Application Notes | CDQ10058
Component | CDQ10058
Circuit | CDQ10058
Schematic | | CDQ10058
Equivalent | CDQ10058
Cross Reference | CDQ10058
Data Sheet | CDQ10058
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