CG125E Transistor Datasheet. Parameters and Characteristics.

Type Designator: CG125E

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.02

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 2000

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 11

Noise Figure, dB: -

Package of CG125E transistor: MICRO-X

CG125E Equivalent Transistors - Cross-Reference Search

CG125E PDF document for downloads:

PDF unavailable!

See also transistors datasheet: CG040C , CG040D , CG040E , CG125 , CG125A , CG125B , CG125C , CG125D , TIP42C , CG125L , CG126 , CG126A , CG126B , CG127 , CG127A , CG127B , CH1201 .

Keywords