CMPT6520 Transistor Datasheet. Parameters and Characteristics.

Type Designator: CMPT6520

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.35

Maximum collector-base voltage |Ucb|, V: 350

Maximum collector-emitter voltage |Uce|, V: 350

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 40

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of CMPT6520 transistor: SOT23

CMPT6520 Equivalent Transistors - Cross-Reference Search

CMPT6520 PDF document for downloads:

5.1. cmpt6428_cmpt6429.pdf Size:322K _central

CMPT6428 CMPT6429 www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT6428 and CMPT6429 are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high gain amplifier applications. MARKING CODES: CMPT6428: C1K CMPT6429: C1L SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL CMPT6428 CMPT6429 UNITS Collector-Base Voltage VCBO 60 55 V Collector-Emitter Voltage VCEO 50 45 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 200 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ?JA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT6428 CMPT6429 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=30V - 10 - 10 nA ICEO VCE=30V - 100 - 100 nA IEBO VBE=5.0V - 10 - 10 nA BVCBO IC=100µA 60 - 55 - V BVCEO IC=1.0mA 50 - 45 - V VCE(SAT) IC=10mA, IB=

See also transistors datasheet: CMPT5089 , CMPT5179 , CMPT5401 , CMPT5551 , CMPT6427 , CMPT6428 , CMPT6429 , CMPT6517 , 2N3866 , CMPT8099 , CMPT8599 , CMPT918 , CMPT930 , CMPTA06 , CMPTA13 , CMPTA14 , CMPTA27 .

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