CMPT930 Transistor Datasheet. Parameters and Characteristics.

Type Designator: CMPT930

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.35

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.01

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 30

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of CMPT930 transistor: SOT23

CMPT930 Equivalent Transistors - Cross-Reference Search

CMPT930 PDF document for downloads:

5.1. cmpt918.pdf Size:323K _central

CMPT918 www.centralsemi.com SURFACE MOUNT NPN SILICON DESCRIPTION: RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (VHF/UHF) amplifier and oscillator applications. MARKING CODE: C3B SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 3.0 V Continuous Collector Current IC 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ?JA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=15V 10 nA BVCBO IC=1.0µA 30 V BVCEO IC=3.0mA 15 V BVEBO IE=10µA 3.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.4 V VBE(SAT) IC=10mA, IB=1.0mA 1.0 V hFE VCE=1.0V, IC=3.0mA 20 fT VCE=10V, IC=4.0mA, f=100MHz 600 MHz Cob

See also transistors datasheet: CMPT6427 , CMPT6428 , CMPT6429 , CMPT6517 , CMPT6520 , CMPT8099 , CMPT8599 , CMPT918 , OC44 , CMPTA06 , CMPTA13 , CMPTA14 , CMPTA27 , CMPTA29 , CMPTA42 , CMPTA44 , CMPTA56 .

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