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2N34
  2N34
  2N34
  2N34
 
2N34
  2N34
  2N34
  2N34
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2N34 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N34 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N34

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.05

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 75

Transition frequency (ft), MHz: 0.2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2N34 transistor: TO22

2N34 Equivalent Transistors - Cross-Reference Search

2N34 PDF doc:

1.1. 2n32_2n33_2n34_2n35.pdf Size:395K _rca

2N34
2N34

1.2. 2n3442r7.pdf Size:135K _motorola

2N34
2N34
Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS Collector Emitter Sustaining Voltage 117 WATTS VCEO(sus) = 140 Vdc (Min) Excellent Second Breakdown Capability CASE 107 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII (TO3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII IIIIII IIIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII

1.3. 2n3439_2n3440.pdf Size:47K _st

2N34
2N34
2N3439 2N3440 SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440 VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A I Base Current 0.5 A B Ptot Total Dissipation at Tc ? 25 oC 10 W Ptot Total Dissipation at Tamb ? 50 oC 1W o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 December 2000 2N3439 / 2N3440 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 17.5 C/W o

1.4. 2n3439.pdf Size:45K _st

2N34
2N34
2N3439 2N3440 SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440 VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A I Base Current 0.5 A B Ptot Total Dissipation at Tc ? 25 oC 10 W Ptot Total Dissipation at Tamb ? 50 oC 1W o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 December 2000 2N3439 / 2N3440 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 17.5 C/W o

1.5. 2n3415.pdf Size:33K _fairchild_semi

2N34
2N34
2N3415 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 T , T C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3415 PD Total Device Dis

1.6. 2n3416_2n3417.pdf Size:304K _fairchild_semi

2N34
2N34
2N3416 2N3417 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3416 / 2N3417 PD Total Devic

1.7. 2n3414_2n3415_2n3416_2n3417_mps3414_mps3415_mps3416_mps3417.pdf Size:58K _central

2N34
2N34
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.8. 2n3442.pdf Size:61K _central

2N34
2N34
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.9. 2n3442-d.pdf Size:65K _onsemi

2N34
2N34
2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR Excellent Second Breakdown Capability NPN SILICON Pb-Free Package is Available* 140 VOLTS - 117 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCB 160 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current - Continuous IC 10 Adc - Peak 15 TO-204AA (TO-3) CASE 1-07 Base Current - Continuous IB 7.0 Adc STYLE 1 - Peak - Total Device Dissipation @ TC = 25_C PD 117 W Derate above 25_C (Note 2) 0.67 W/_C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg -65 to +200 _C Temperature Range THERMAL CHARACTERISTICS Characteristics Symbol Max Uni

1.10. 2n3442-2n4347.pdf Size:197K _comset

2N34
2N34
2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Sustaining Voltage- VCEO(sus) = 120 Vdc (Min) 2N4347 140 Vdc (Min) 2N3442 Excellent Second-Breakdown Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4347 120 VCEO #Collector-Emitter Voltage V 2N3442 140 2N4347 140 VCB Collector-Base Voltage Vdc 2N3442 160 2N4347 VEB Emitter-Base Voltage 7.0 Vdc 2N3442 2N4347 5.0 Continuous 2N3442 10 Collector Current IC Adc 2N4347 10 Peak 2N3442 15 (**) 2N4347 3.0 Continuous 2N3442 7.0 IB Base Current Adc 2N4347 8.0 Peak 2N3442 - 2N4347 100 @ TC = 25 Total Device Dissipation 2N3442 117 Watts PD 2N4347 Derate 0.57 W/C

1.11. 2n4347_2n3442.pdf Size:132K _mospec

2N34
2N34
A A A

1.12. 2n3447.pdf Size:11K _semelab

2N34
2N34
2N3447 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 40 120 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliabl

1.13. 2n3445.pdf Size:11K _semelab

2N34
2N34
2N3445 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 20 60 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable

1.14. 2n3441.pdf Size:13K _semelab

2N34
2N34
2N3441 SEME LAB MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. TRANSISTOR 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES Low Saturation Voltages High Voltage Ratings Maximum SafeOperatingArea Curves for DC and Pulse Operation. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. APPLICATIONS Series and Shunt Regulators TO66 Audio Amplifiers PIN 1 Base Power Switching Circuits PIN 2 Emitter Case is Collector. Solenoid and Relay Drivers ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO Collector Base Voltage 160V VCEO Collector Emitter Voltage 140V VEBO Emitter Base Voltage 7V IC Collector Current 3A IB Base Current 2A Ptot Total Power Dissipation 25W Derate above 25C 0.142 W /C Tj , Tstg Operating and Storage Junction Temperature Range 65 to 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Pre

1.15. 2n3478.pdf Size:44K _bocasemi

2N34
2N34
IS / IECQC 700000 IS/ISO 9002 IS / IECQC 750100 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N3478 TO-72 Boca Semiconductor Corp. BSC VHF/UHF Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 2.0 V Collector Current IC 50 mA Power Dissipation @ Ta=25 deg C Ptot 200 mW Operating & Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Cut off Current ICBO VCB=15V, IE=0 - - 20 nA Collector -Base Voltage VCBO IC=1uA, IE=0 30 - - V Collector -Emitter Voltage VCEO IC=1uA, IB=0 15 - - V Emitter Base Voltage VEBO IE=1uA, IC=0 2.0 - - V DC Current Gain hFE IC=2mA,VCE=8V 25 - 150 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio

1.16. 2n3496_7.pdf Size:190K _cdil

2N34
2N34
Continental Device India Limited Q An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3496 2N3497 TO-18 Metal Can Package General Purpose Transistors for Switching and Linear Applications. DC Amplilfier & Driver For Industrial Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N3496 2N3497 UNIT VCEO Collector Emitter Voltage 80 120 V VCBO Collector Base Voltage 80 120 V VEBO Emitter Base Voltage <---------------------4.5------------------> V IC Collector Current Continuous <--------------------100-------------------> mA PD Power Dissipation @Ta=25?C <---------------------400------------------- mW Derate Above 25?C <-------------------2.28-----------------> mW/?C PD Power Dissipation @ Tc=25?C <---------------------1.2-----------------> W Derate Above 25?C <--------------------6.85-----------------> mW/?C Tj, Tstg Operating and Storage Junction -65 to +200 ?C Tempera

1.17. 2n3498_99_2n3500_01.pdf Size:310K _cdil

2N34
2N34
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS 2N3499 2N3501 VCEO Collector Emitter Voltage 100 150 V VCBO Collector Base Voltage 100 150 V VEBO Emitter Base Voltage 6V IC Collector Current Continuous 500 300 mA PD Power Dissipation @ Ta=25?C 1.0 W Derate Above 25?C 5.71 mW/?C PD Power Dissipation@ Tc=25?C 5.0 W Derate Above 25?C 28.6 mW/?C Tj, Tstg Operating And Storage Junction -65 to +200 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) Junction to Ambient 175 ?C/W Rth(j-c) Junction to Case 35 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS MIN TYP MAX BVCEO* Collector Emitter Breakdown Voltage IC=10mA,IB=0 2N3498/3499 V 100 2N3500/3

1.18. 2n3445.pdf Size:172K _jmnic

2N34
2N34
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ?/W Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emit

1.19. 2n3446.pdf Size:172K _jmnic

2N34
2N34
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ?/W Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-e

1.20. 2n3414.pdf Size:48K _microelectronics

2N34
2N34

1.21. 2n3498_2n3499_2n3450_2n3451.pdf Size:69K _microsemi

2N34
2N34
TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 100 150 Vdc VCBO Emitter-Base Voltage 6.0 6.0 Vdc VEBO TO-5* Collector Current 500 300 mAdc IC 2N3498L, 2N3499L Total Power Dissipation @ T = 250C (1) 1.0 W A PT 2N3500L, 2N3501L @ T = 250C (2) 5.0 W C 0 Operating & Storage Junction Temp. Range -55 to +200 C TJ, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance: Junction-to-Case 35 R?JC 0 C/W TO-39* (TO-205AD) Junction-to-Ambient 175 R?JA 2N3498, 2N3499 *Electrical characteristics for L suffix devices are identical to the non L corresponding devices 2N3500, 2N3501 1) Derate linearly 5.71 W/0C for T > 250C A 2) D

1.22. 2n3418.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3418 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 85V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 85V JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability

1.23. 2n3420.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3420 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 85V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 85 JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability o

1.24. 2n3421.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3421 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 125V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 125 JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability

1.25. 2n3419.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3419 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 125V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 125V JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliabilit

1.26. 2n3468.pdf Size:79K _semicoa

2N34
2N34
Data Sheet No. 2N3468 Generic Part Number: Type 2N3468 2N3468 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.0 mA o C Operating Junction Temperature TJ -55 to +175 o C Storage Temperature TSTG -55 to +175 Data Sheet No. 2N3468 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 50 --- V IC = 10 A Collector-Emitter Breakdown Voltage V(BR)CEO 50 --- V I

1.27. 2n3486.pdf Size:45K _semicoa

2N34
2N34
Data Sheet No. 2N3486A Generic Part Number: Type 2N3486A 2N3486A Geometry 0600 Polarity PNP REF: MIL-PRF-19500/392 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-46 case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/392 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. TO-46 Radiation Graphs available. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 600 mA o C Operating Junction Temperature TJ -55 to +200 o C Storage Temperature TSTG -55 to +200 Data Sheet No. 2N3486A Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Vol

1.28. 2n3467.pdf Size:52K _semicoa

2N34
2N34
Data Sheet No. 2N3467 Generic Part Number: Type 2N3467 2N3467 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 40 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.0 mA o C Operating Junction Temperature TJ -55 to +175 o C Storage Temperature TSTG -55 to +175 Data Sheet No. 2N3467 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 40 --- V IC = 10 A Collector-Emitter Breakdown Voltage V(BR)CEO 40 --- V IC

1.29. 2n3497.pdf Size:47K _semicoa

2N34
2N34
Data Sheet No. 2N3498 Generic Part Number: Type 2N3498 2N3498 Geometry 5620 Polarity NPN REF: MIL-PRF-19500/366 Qual Level: JAN - JANTXV Features: General-purpose silicon transistor for switching and amplifier appli- cations. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/366 which TO-39 Semicoa meets in all cases. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter voltage VCEO 100 V Collector-Base Voltage VCBO 100 V Emitter-Base voltage VEBO 6.0 V Collector Current, Continuous IC 500 mA Power Dissipation, TA = 25oC 5.0 mW PD Derate above 25oC 28.8 mW/oC o C Operating Junction Temperature TJ -65 to +200 o C Storage Temperature TSTG -65 to +200 Data Sheet No. 2N3498 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO

1.30. 2n3485.pdf Size:45K _semicoa

2N34
2N34
Data Sheet No. 2N3485A Generic Part Number: Type 2N3485A 2N3485A Geometry 0600 Polarity PNP REF: MIL-PRF-19500/392 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-46 case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/392 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. TO-46 Radiation Graphs available. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 600 mA o C Operating Junction Temperature TJ -55 to +200 o C Storage Temperature TSTG -55 to +200 Data Sheet No. 2N3485A Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Vol

1.31. 2n3447.pdf Size:129K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UN

1.32. 2n3448.pdf Size:129K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

1.33. 2n3445.pdf Size:114K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER I CHAN N Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector-base voltage SEMIC GE Open emitter Open base Open collector TC=25Ўж CONDITIONS O CTOR NDU VALUE 80 80 7 7.5 115 150 -65~200 UNIT V V V A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT Ўж /W

1.34. 2n3446.pdf Size:114K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage I HANG NC Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature O EMIC ES Open emitter Open base Open collector TC=25Ўж CONDITIONS CTOR NDU VALUE 100 100 7 7.5 115 150 -65~200 UNIT V V V A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT Ўж /W

1.35. 2n3442.pdf Size:130K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25? 117 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.5 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Po

1.36. 2n3441.pdf Size:130K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25? APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: ·Driver for high power outputs ·Series and shunt regulators ·Audio and servo amplifiers ·Solenoid and relay drivers ·Power switching circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 2 A PD Total power dissipation TC=25? 25 W Tj Junction temperature 200 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX

See also transistors datasheet: 2N3394 , 2N3394U , 2N3395 , 2N3396 , 2N3397 , 2N3398 , 2N3399 , 2N339A , 2N3053 , 2N340 , 2N3400 , 2N3401 , 2N3402 , 2N3403 , 2N3404 , 2N3405 , 2N3407 .

Keywords

 2N34 Datasheet  2N34 Datenblatt  2N34 RoHS  2N34 Distributor
 2N34 Application Notes  2N34 Component  2N34 Circuit  2N34 Schematic
 2N34 Equivalent  2N34 Cross Reference  2N34 Data Sheet  2N34 Fiche Technique

 

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