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2N34
  2N34
  2N34
 
2N34
  2N34
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2N34
  2N34
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2N34 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N34 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N34

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.05

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 75

Transition frequency (ft), MHz: 0.2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2N34 transistor: TO22

2N34 Equivalent Transistors - Cross-Reference Search

2N34 PDF doc:

1.1. 2n32_2n33_2n34_2n35.pdf Size:395K _rca

2N34
2N34

1.2. 2n3442r7.pdf Size:135K _motorola

2N34
2N34
Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS Collector Emitter Sustaining Voltage 117 WATTS VCEO(sus) = 140 Vdc (Min) Excellent Second Breakdown Capability CASE 107 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII (TO3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII IIIIII IIIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII

1.3. 2n3439_2n3440.pdf Size:47K _st

2N34
2N34
2N3439 2N3440 SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440 VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A I Base Current 0.5 A B Ptot Total Dissipation at Tc ? 25 oC 10 W Ptot Total Dissipation at Tamb ? 50 oC 1W o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 December 2000 2N3439 / 2N3440 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 17.5 C/W o

1.4. 2n3439.pdf Size:45K _st

2N34
2N34
2N3439 2N3440 SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440 VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A I Base Current 0.5 A B Ptot Total Dissipation at Tc ? 25 oC 10 W Ptot Total Dissipation at Tamb ? 50 oC 1W o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 December 2000 2N3439 / 2N3440 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 17.5 C/W o

1.5. 2n3416_2n3417.pdf Size:304K _fairchild_semi

2N34
2N34
2N3416 2N3417 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3416 / 2N3417 PD Total Devic

1.6. 2n3415.pdf Size:33K _fairchild_semi

2N34
2N34
2N3415 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 T , T C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3415 PD Total Device Dis

1.7. 2n3442.pdf Size:61K _central

2N34
2N34
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.8. 2n3414_2n3415_2n3416_2n3417_mps3414_mps3415_mps3416_mps3417.pdf Size:58K _central

2N34
2N34
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.9. 2n3442-d.pdf Size:65K _onsemi

2N34
2N34
2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR Excellent Second Breakdown Capability NPN SILICON Pb-Free Package is Available* 140 VOLTS - 117 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCB 160 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current - Continuous IC 10 Adc - Peak 15 TO-204AA (TO-3) CASE 1-07 Base Current - Continuous IB 7.0 Adc STYLE 1 - Peak - Total Device Dissipation @ TC = 25_C PD 117 W Derate above 25_C (Note 2) 0.67 W/_C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg -65 to +200 _C Temperature Range THERMAL CHARACTERISTICS Characteristics Symbol Max Uni

1.10. 2n3442-2n4347.pdf Size:197K _comset

2N34
2N34
2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Sustaining Voltage- VCEO(sus) = 120 Vdc (Min) 2N4347 140 Vdc (Min) 2N3442 Excellent Second-Breakdown Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4347 120 VCEO #Collector-Emitter Voltage V 2N3442 140 2N4347 140 VCB Collector-Base Voltage Vdc 2N3442 160 2N4347 VEB Emitter-Base Voltage 7.0 Vdc 2N3442 2N4347 5.0 Continuous 2N3442 10 Collector Current IC Adc 2N4347 10 Peak 2N3442 15 (**) 2N4347 3.0 Continuous 2N3442 7.0 IB Base Current Adc 2N4347 8.0 Peak 2N3442 - 2N4347 100 @ TC = 25 Total Device Dissipation 2N3442 117 Watts PD 2N4347 Derate 0.57 W/C

1.11. 2n4347_2n3442.pdf Size:132K _mospec

2N34
2N34
A A A

1.12. 2n3447.pdf Size:11K _semelab

2N34
2N34
2N3447 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 40 120 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliabl

1.13. 2n3441.pdf Size:13K _semelab

2N34
2N34
2N3441 SEME LAB MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. TRANSISTOR 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES Low Saturation Voltages High Voltage Ratings Maximum SafeOperatingArea Curves for DC and Pulse Operation. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. APPLICATIONS Series and Shunt Regulators TO66 Audio Amplifiers PIN 1 Base Power Switching Circuits PIN 2 Emitter Case is Collector. Solenoid and Relay Drivers ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO Collector Base Voltage 160V VCEO Collector Emitter Voltage 140V VEBO Emitter Base Voltage 7V IC Collector Current 3A IB Base Current 2A Ptot Total Power Dissipation 25W Derate above 25C 0.142 W /C Tj , Tstg Operating and Storage Junction Temperature Range 65 to 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Pre

1.14. 2n3445.pdf Size:11K _semelab

2N34
2N34
2N3445 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 20 60 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable

1.15. 2n3478.pdf Size:44K _bocasemi

2N34
2N34
IS / IECQC 700000 IS/ISO 9002 IS / IECQC 750100 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N3478 TO-72 Boca Semiconductor Corp. BSC VHF/UHF Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 2.0 V Collector Current IC 50 mA Power Dissipation @ Ta=25 deg C Ptot 200 mW Operating & Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Cut off Current ICBO VCB=15V, IE=0 - - 20 nA Collector -Base Voltage VCBO IC=1uA, IE=0 30 - - V Collector -Emitter Voltage VCEO IC=1uA, IB=0 15 - - V Emitter Base Voltage VEBO IE=1uA, IC=0 2.0 - - V DC Current Gain hFE IC=2mA,VCE=8V 25 - 150 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio

1.16. 2n3496_7.pdf Size:190K _cdil

2N34
2N34
Continental Device India Limited Q An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3496 2N3497 TO-18 Metal Can Package General Purpose Transistors for Switching and Linear Applications. DC Amplilfier & Driver For Industrial Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N3496 2N3497 UNIT VCEO Collector Emitter Voltage 80 120 V VCBO Collector Base Voltage 80 120 V VEBO Emitter Base Voltage <---------------------4.5------------------> V IC Collector Current Continuous <--------------------100-------------------> mA PD Power Dissipation @Ta=25?C <---------------------400------------------- mW Derate Above 25?C <-------------------2.28-----------------> mW/?C PD Power Dissipation @ Tc=25?C <---------------------1.2-----------------> W Derate Above 25?C <--------------------6.85-----------------> mW/?C Tj, Tstg Operating and Storage Junction -65 to +200 ?C Tempera

1.17. 2n3498_99_2n3500_01.pdf Size:310K _cdil

2N34
2N34
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS 2N3499 2N3501 VCEO Collector Emitter Voltage 100 150 V VCBO Collector Base Voltage 100 150 V VEBO Emitter Base Voltage 6V IC Collector Current Continuous 500 300 mA PD Power Dissipation @ Ta=25?C 1.0 W Derate Above 25?C 5.71 mW/?C PD Power Dissipation@ Tc=25?C 5.0 W Derate Above 25?C 28.6 mW/?C Tj, Tstg Operating And Storage Junction -65 to +200 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) Junction to Ambient 175 ?C/W Rth(j-c) Junction to Case 35 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS MIN TYP MAX BVCEO* Collector Emitter Breakdown Voltage IC=10mA,IB=0 2N3498/3499 V 100 2N3500/3

1.18. 2n3414.pdf Size:48K _microelectronics

2N34
2N34

1.19. 2n3420.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3420 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 85V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 85 JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability o

1.20. 2n3421.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3421 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 125V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 125 JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability

1.21. 2n3498_2n3499_2n3450_2n3451.pdf Size:69K _microsemi

2N34
2N34
TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 100 150 Vdc VCBO Emitter-Base Voltage 6.0 6.0 Vdc VEBO TO-5* Collector Current 500 300 mAdc IC 2N3498L, 2N3499L Total Power Dissipation @ T = 250C (1) 1.0 W A PT 2N3500L, 2N3501L @ T = 250C (2) 5.0 W C 0 Operating & Storage Junction Temp. Range -55 to +200 C TJ, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance: Junction-to-Case 35 R?JC 0 C/W TO-39* (TO-205AD) Junction-to-Ambient 175 R?JA 2N3498, 2N3499 *Electrical characteristics for L suffix devices are identical to the non L corresponding devices 2N3500, 2N3501 1) Derate linearly 5.71 W/0C for T > 250C A 2) D

1.22. 2n3418.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3418 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 85V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 85V JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability

1.23. 2n3419.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3419 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 125V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 125V JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliabilit

1.24. 2n3485.pdf Size:45K _semicoa

2N34
2N34
Data Sheet No. 2N3485A Generic Part Number: Type 2N3485A 2N3485A Geometry 0600 Polarity PNP REF: MIL-PRF-19500/392 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-46 case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/392 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. TO-46 Radiation Graphs available. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 600 mA o C Operating Junction Temperature TJ -55 to +200 o C Storage Temperature TSTG -55 to +200 Data Sheet No. 2N3485A Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Vol

1.25. 2n3486.pdf Size:45K _semicoa

2N34
2N34
Data Sheet No. 2N3486A Generic Part Number: Type 2N3486A 2N3486A Geometry 0600 Polarity PNP REF: MIL-PRF-19500/392 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-46 case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/392 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. TO-46 Radiation Graphs available. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 600 mA o C Operating Junction Temperature TJ -55 to +200 o C Storage Temperature TSTG -55 to +200 Data Sheet No. 2N3486A Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Vol

1.26. 2n3468.pdf Size:79K _semicoa

2N34
2N34
Data Sheet No. 2N3468 Generic Part Number: Type 2N3468 2N3468 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.0 mA o C Operating Junction Temperature TJ -55 to +175 o C Storage Temperature TSTG -55 to +175 Data Sheet No. 2N3468 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 50 --- V IC = 10 A Collector-Emitter Breakdown Voltage V(BR)CEO 50 --- V I

1.27. 2n3467.pdf Size:52K _semicoa

2N34
2N34
Data Sheet No. 2N3467 Generic Part Number: Type 2N3467 2N3467 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 40 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.0 mA o C Operating Junction Temperature TJ -55 to +175 o C Storage Temperature TSTG -55 to +175 Data Sheet No. 2N3467 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 40 --- V IC = 10 A Collector-Emitter Breakdown Voltage V(BR)CEO 40 --- V IC

1.28. 2n3497.pdf Size:47K _semicoa

2N34
2N34
Data Sheet No. 2N3498 Generic Part Number: Type 2N3498 2N3498 Geometry 5620 Polarity NPN REF: MIL-PRF-19500/366 Qual Level: JAN - JANTXV Features: General-purpose silicon transistor for switching and amplifier appli- cations. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/366 which TO-39 Semicoa meets in all cases. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter voltage VCEO 100 V Collector-Base Voltage VCBO 100 V Emitter-Base voltage VEBO 6.0 V Collector Current, Continuous IC 500 mA Power Dissipation, TA = 25oC 5.0 mW PD Derate above 25oC 28.8 mW/oC o C Operating Junction Temperature TJ -65 to +200 o C Storage Temperature TSTG -65 to +200 Data Sheet No. 2N3498 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO

1.29. 2n3447.pdf Size:129K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UN

1.30. 2n3441.pdf Size:130K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25? APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: ·Driver for high power outputs ·Series and shunt regulators ·Audio and servo amplifiers ·Solenoid and relay drivers ·Power switching circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 2 A PD Total power dissipation TC=25? 25 W Tj Junction temperature 200 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX

1.31. 2n3442.pdf Size:130K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25? 117 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.5 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Po

1.32. 2n3445.pdf Size:114K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER I CHAN N Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector-base voltage SEMIC GE Open emitter Open base Open collector TC=25Ўж CONDITIONS O CTOR NDU VALUE 80 80 7 7.5 115 150 -65~200 UNIT V V V A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT Ўж /W

1.33. 2n3446.pdf Size:114K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage I HANG NC Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature O EMIC ES Open emitter Open base Open collector TC=25Ўж CONDITIONS CTOR NDU VALUE 100 100 7 7.5 115 150 -65~200 UNIT V V V A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT Ўж /W

1.34. 2n3448.pdf Size:129K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

See also transistors datasheet: 2N3394 , 2N3394U , 2N3395 , 2N3396 , 2N3397 , 2N3398 , 2N3399 , 2N339A , 2N3053 , 2N340 , 2N3400 , 2N3401 , 2N3402 , 2N3403 , 2N3404 , 2N3405 , 2N3407 .

Keywords

 2N34 Datasheet  2N34 Datenblatt  2N34 RoHS  2N34 Distributor
 2N34 Application Notes  2N34 Component  2N34 Circuit  2N34 Schematic
 2N34 Equivalent  2N34 Cross Reference  2N34 Data Sheet  2N34 Fiche Technique

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