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2N34
  2N34
  2N34
 
2N34
  2N34
  2N34
 
2N34
  2N34
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2N34 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N34 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N34

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.05

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 75

Transition frequency (ft), MHz: 0.2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2N34 transistor: TO22

2N34 Equivalent Transistors - Cross-Reference Search

2N34 PDF doc:

1.1. 2n32_2n33_2n34_2n35.pdf Size:395K _rca

2N34
2N34

1.2. 2n3442r7.pdf Size:135K _motorola

2N34
2N34
Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS Collector Emitter Sustaining Voltage 117 WATTS VCEO(sus) = 140 Vdc (Min) Excellent Second Breakdown Capability CASE 107 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII TO204AA IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII (TO3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIII IIIIII IIIII IIIIII IIIII IIIIII IIIII Rating Symbol Value Unit IIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIII

1.3. 2n3439_2n3440.pdf Size:47K _st

2N34
2N34
2N3439 2N3440 SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440 VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A I Base Current 0.5 A B Ptot Total Dissipation at Tc ? 25 oC 10 W Ptot Total Dissipation at Tamb ? 50 oC 1W o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 December 2000 2N3439 / 2N3440 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 17.5 C/W o

1.4. 2n3439.pdf Size:45K _st

2N34
2N34
2N3439 2N3440 SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440 VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A I Base Current 0.5 A B Ptot Total Dissipation at Tc ? 25 oC 10 W Ptot Total Dissipation at Tamb ? 50 oC 1W o Tstg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C 1/4 December 2000 2N3439 / 2N3440 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 17.5 C/W o

1.5. 2n3415.pdf Size:33K _fairchild_semi

2N34
2N34
2N3415 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 T , T C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3415 PD Total Device Dis

1.6. 2n3416_2n3417.pdf Size:304K _fairchild_semi

2N34
2N34
2N3416 2N3417 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3416 / 2N3417 PD Total Devic

1.7. 2n3414_2n3415_2n3416_2n3417_mps3414_mps3415_mps3416_mps3417.pdf Size:58K _central

2N34
2N34
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.8. 2n3442.pdf Size:61K _central

2N34
2N34
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.9. 2n3442-d.pdf Size:65K _onsemi

2N34
2N34
2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR Excellent Second Breakdown Capability NPN SILICON Pb-Free Package is Available* 140 VOLTS - 117 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCB 160 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current - Continuous IC 10 Adc - Peak 15 TO-204AA (TO-3) CASE 1-07 Base Current - Continuous IB 7.0 Adc STYLE 1 - Peak - Total Device Dissipation @ TC = 25_C PD 117 W Derate above 25_C (Note 2) 0.67 W/_C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg -65 to +200 _C Temperature Range THERMAL CHARACTERISTICS Characteristics Symbol Max Uni

1.10. 2n3442-2n4347.pdf Size:197K _comset

2N34
2N34
2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Sustaining Voltage- VCEO(sus) = 120 Vdc (Min) 2N4347 140 Vdc (Min) 2N3442 Excellent Second-Breakdown Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4347 120 VCEO #Collector-Emitter Voltage V 2N3442 140 2N4347 140 VCB Collector-Base Voltage Vdc 2N3442 160 2N4347 VEB Emitter-Base Voltage 7.0 Vdc 2N3442 2N4347 5.0 Continuous 2N3442 10 Collector Current IC Adc 2N4347 10 Peak 2N3442 15 (**) 2N4347 3.0 Continuous 2N3442 7.0 IB Base Current Adc 2N4347 8.0 Peak 2N3442 - 2N4347 100 @ TC = 25 Total Device Dissipation 2N3442 117 Watts PD 2N4347 Derate 0.57 W/C

1.11. 2n4347_2n3442.pdf Size:132K _mospec

2N34
2N34
A A A

1.12. 2n3447.pdf Size:11K _semelab

2N34
2N34
2N3447 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 40 120 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliabl

1.13. 2n3445.pdf Size:11K _semelab

2N34
2N34
2N3445 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 7.5 A hFE @ 5.0/3.0 (VCE / IC) 20 60 - ft Hz PD 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable

1.14. 2n3441.pdf Size:13K _semelab

2N34
2N34
2N3441 SEME LAB MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. TRANSISTOR 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES Low Saturation Voltages High Voltage Ratings Maximum SafeOperatingArea Curves for DC and Pulse Operation. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. APPLICATIONS Series and Shunt Regulators TO66 Audio Amplifiers PIN 1 Base Power Switching Circuits PIN 2 Emitter Case is Collector. Solenoid and Relay Drivers ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO Collector Base Voltage 160V VCEO Collector Emitter Voltage 140V VEBO Emitter Base Voltage 7V IC Collector Current 3A IB Base Current 2A Ptot Total Power Dissipation 25W Derate above 25C 0.142 W /C Tj , Tstg Operating and Storage Junction Temperature Range 65 to 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Pre

1.15. 2n3478.pdf Size:44K _bocasemi

2N34
2N34
IS / IECQC 700000 IS/ISO 9002 IS / IECQC 750100 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N3478 TO-72 Boca Semiconductor Corp. BSC VHF/UHF Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 2.0 V Collector Current IC 50 mA Power Dissipation @ Ta=25 deg C Ptot 200 mW Operating & Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Cut off Current ICBO VCB=15V, IE=0 - - 20 nA Collector -Base Voltage VCBO IC=1uA, IE=0 30 - - V Collector -Emitter Voltage VCEO IC=1uA, IB=0 15 - - V Emitter Base Voltage VEBO IE=1uA, IC=0 2.0 - - V DC Current Gain hFE IC=2mA,VCE=8V 25 - 150 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio

1.16. 2n3496_7.pdf Size:190K _cdil

2N34
2N34
Continental Device India Limited Q An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3496 2N3497 TO-18 Metal Can Package General Purpose Transistors for Switching and Linear Applications. DC Amplilfier & Driver For Industrial Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N3496 2N3497 UNIT VCEO Collector Emitter Voltage 80 120 V VCBO Collector Base Voltage 80 120 V VEBO Emitter Base Voltage <---------------------4.5------------------> V IC Collector Current Continuous <--------------------100-------------------> mA PD Power Dissipation @Ta=25?C <---------------------400------------------- mW Derate Above 25?C <-------------------2.28-----------------> mW/?C PD Power Dissipation @ Tc=25?C <---------------------1.2-----------------> W Derate Above 25?C <--------------------6.85-----------------> mW/?C Tj, Tstg Operating and Storage Junction -65 to +200 ?C Tempera

1.17. 2n3498_99_2n3500_01.pdf Size:310K _cdil

2N34
2N34
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS 2N3499 2N3501 VCEO Collector Emitter Voltage 100 150 V VCBO Collector Base Voltage 100 150 V VEBO Emitter Base Voltage 6V IC Collector Current Continuous 500 300 mA PD Power Dissipation @ Ta=25?C 1.0 W Derate Above 25?C 5.71 mW/?C PD Power Dissipation@ Tc=25?C 5.0 W Derate Above 25?C 28.6 mW/?C Tj, Tstg Operating And Storage Junction -65 to +200 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) Junction to Ambient 175 ?C/W Rth(j-c) Junction to Case 35 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS MIN TYP MAX BVCEO* Collector Emitter Breakdown Voltage IC=10mA,IB=0 2N3498/3499 V 100 2N3500/3

1.18. 2n3445.pdf Size:172K _jmnic

2N34
2N34
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ?/W Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emit

1.19. 2n3446.pdf Size:172K _jmnic

2N34
2N34
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.17 ?/W Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-e

1.20. 2n3414.pdf Size:48K _microelectronics

2N34
2N34

1.21. 2n3498_2n3499_2n3450_2n3451.pdf Size:69K _microsemi

2N34
2N34
TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 100 150 Vdc VCBO Emitter-Base Voltage 6.0 6.0 Vdc VEBO TO-5* Collector Current 500 300 mAdc IC 2N3498L, 2N3499L Total Power Dissipation @ T = 250C (1) 1.0 W A PT 2N3500L, 2N3501L @ T = 250C (2) 5.0 W C 0 Operating & Storage Junction Temp. Range -55 to +200 C TJ, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance: Junction-to-Case 35 R?JC 0 C/W TO-39* (TO-205AD) Junction-to-Ambient 175 R?JA 2N3498, 2N3499 *Electrical characteristics for L suffix devices are identical to the non L corresponding devices 2N3500, 2N3501 1) Derate linearly 5.71 W/0C for T > 250C A 2) D

1.22. 2n3418.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3418 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 85V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 85V JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability

1.23. 2n3420.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3420 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 85V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 85 JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability o

1.24. 2n3421.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3421 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 125V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 125 JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability

1.25. 2n3419.pdf Size:63K _microsemi

2N34
2N34
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3419 APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching 3 Amp, 125V, FEATURES: NPN Silicon Power Meets MIL-S-19500/393 Transistors Collector-Base Voltage: up to 125V JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100 C Fast Switching DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliabilit

1.26. 2n3468.pdf Size:79K _semicoa

2N34
2N34
Data Sheet No. 2N3468 Generic Part Number: Type 2N3468 2N3468 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.0 mA o C Operating Junction Temperature TJ -55 to +175 o C Storage Temperature TSTG -55 to +175 Data Sheet No. 2N3468 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 50 --- V IC = 10 A Collector-Emitter Breakdown Voltage V(BR)CEO 50 --- V I

1.27. 2n3486.pdf Size:45K _semicoa

2N34
2N34
Data Sheet No. 2N3486A Generic Part Number: Type 2N3486A 2N3486A Geometry 0600 Polarity PNP REF: MIL-PRF-19500/392 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-46 case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/392 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. TO-46 Radiation Graphs available. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 600 mA o C Operating Junction Temperature TJ -55 to +200 o C Storage Temperature TSTG -55 to +200 Data Sheet No. 2N3486A Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Vol

1.28. 2n3467.pdf Size:52K _semicoa

2N34
2N34
Data Sheet No. 2N3467 Generic Part Number: Type 2N3467 2N3467 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 40 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.0 mA o C Operating Junction Temperature TJ -55 to +175 o C Storage Temperature TSTG -55 to +175 Data Sheet No. 2N3467 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 40 --- V IC = 10 A Collector-Emitter Breakdown Voltage V(BR)CEO 40 --- V IC

1.29. 2n3497.pdf Size:47K _semicoa

2N34
2N34
Data Sheet No. 2N3498 Generic Part Number: Type 2N3498 2N3498 Geometry 5620 Polarity NPN REF: MIL-PRF-19500/366 Qual Level: JAN - JANTXV Features: General-purpose silicon transistor for switching and amplifier appli- cations. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/366 which TO-39 Semicoa meets in all cases. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter voltage VCEO 100 V Collector-Base Voltage VCBO 100 V Emitter-Base voltage VEBO 6.0 V Collector Current, Continuous IC 500 mA Power Dissipation, TA = 25oC 5.0 mW PD Derate above 25oC 28.8 mW/oC o C Operating Junction Temperature TJ -65 to +200 o C Storage Temperature TSTG -65 to +200 Data Sheet No. 2N3498 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO

1.30. 2n3485.pdf Size:45K _semicoa

2N34
2N34
Data Sheet No. 2N3485A Generic Part Number: Type 2N3485A 2N3485A Geometry 0600 Polarity PNP REF: MIL-PRF-19500/392 Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applica- tons. Housed in a TO-46 case. Also available in chip form using the 0600 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/392 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. TO-46 Radiation Graphs available. Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 600 mA o C Operating Junction Temperature TJ -55 to +200 o C Storage Temperature TSTG -55 to +200 Data Sheet No. 2N3485A Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Vol

1.31. 2n3447.pdf Size:129K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UN

1.32. 2n3448.pdf Size:129K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7.5 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.17 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX

1.33. 2n3445.pdf Size:114K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER I CHAN N Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector-base voltage SEMIC GE Open emitter Open base Open collector TC=25Ўж CONDITIONS O CTOR NDU VALUE 80 80 7 7.5 115 150 -65~200 UNIT V V V A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT Ўж /W

1.34. 2n3446.pdf Size:114K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage I HANG NC Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature O EMIC ES Open emitter Open base Open collector TC=25Ўж CONDITIONS CTOR NDU VALUE 100 100 7 7.5 115 150 -65~200 UNIT V V V A W Ўж Ўж THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT Ўж /W

1.35. 2n3442.pdf Size:130K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25? 117 W Tj Junction temperature 150 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.5 ?/W R(th) jc Inchange Semiconductor Product Specification Silicon NPN Po

1.36. 2n3441.pdf Size:130K _inchange_semiconductor

2N34
2N34
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25? APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: ·Driver for high power outputs ·Series and shunt regulators ·Audio and servo amplifiers ·Solenoid and relay drivers ·Power switching circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 2 A PD Total power dissipation TC=25? 25 W Tj Junction temperature 200 ? Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX

See also transistors datasheet: 2N3394 , 2N3394U , 2N3395 , 2N3396 , 2N3397 , 2N3398 , 2N3399 , 2N339A , 2N3053 , 2N340 , 2N3400 , 2N3401 , 2N3402 , 2N3403 , 2N3404 , 2N3405 , 2N3407 .

Keywords

 2N34 Datasheet  2N34 Datenblatt  2N34 RoHS  2N34 Distributor
 2N34 Application Notes  2N34 Component  2N34 Circuit  2N34 Schematic
 2N34 Equivalent  2N34 Cross Reference  2N34 Data Sheet  2N34 Fiche Technique

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