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2N34 Transistor (IC) Datasheet. Cross Reference Search. 2N34 Equivalent

Type Designator: 2N34

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.05

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 75

Transition frequency (ft), MHz: 0.2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 35

Noise Figure, dB: -

Package of 2N34 transistor: TO22

2N34 Transistor Equivalent Substitute - Cross-Reference Search

 

2N34 PDF:

1.1. 2n32_2n33_2n34_2n35.pdf Size:395K _rca

2N34
2N34

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1.2. 2n3442r7.pdf Size:135K _motorola

2N34
2N34

Order this document MOTOROLA by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors 10 AMPERE NPN silicon power transistor designed for applications in industrial and commercial POWER TRANSISTOR equipment including high fidelity audio amplifiers, series and shunt regulators and NPN SILICON power switches. 140 VOLTS • Collector –Emitter Sustaining Voltage —

1.3. 2n3439.pdf Size:45K _st

2N34
2N34

2N3439 2N3440 ® SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series r

1.4. 2n3439_2n3440.pdf Size:47K _st

2N34
2N34

2N3439 2N3440 ® SILICON NPN TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series r

1.5. 2n3415.pdf Size:33K _fairchild_semi

2N34
2N34

2N3415 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO V Emit

1.6. 2n3416_2n3417.pdf Size:304K _fairchild_semi

2N34
2N34

2N3416 2N3417 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VE

1.7. 2n3442.pdf Size:61K _central

2N34
2N34

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.8. 2n3414_2n3415_2n3416_2n3417_mps3414_mps3415_mps3416_mps3417.pdf Size:58K _central

2N34
2N34

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.9. 2n3442-d.pdf Size:65K _onsemi

2N34
2N34

2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. http://onsemi.com Features 10 AMPERE • Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min) POWER TRANSISTOR • Excellent Second Breakdown Capability N

1.10. 2n3442-2n4347.pdf Size:197K _comset

2N34
2N34

2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347 • Collector-Emitter Sustaining Volta

1.11. 2n4347_2n3442.pdf Size:132K _mospec

2N34
2N34

A A A

1.12. 2n3458_2n3459_2n3460.pdf Size:52K _no

2N34
2N34

1.13. 2n3458_2n3459_2n3460.txt Size:0K _no

2N34
2N34

1.14. 2n3441.pdf Size:13K _semelab

2N34
2N34

2N3441 SEME LAB MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. TRANSISTOR 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES • Low Saturation Voltages • High Voltage Ratings • Maximum Safe–Operating–Area Curves for DC and Pulse Operation. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. APPLI

1.15. 2n3447.pdf Size:11K _semelab

2N34
2N34

2N3447 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.16. 2n3445.pdf Size:11K _semelab

2N34
2N34

2N3445 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

1.17. 2n3478.pdf Size:44K _bocasemi

2N34
2N34

IS / IECQC 700000 IS/ISO 9002 IS / IECQC 750100 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N3478 TO-72 Boca Semiconductor Corp. BSC VHF/UHF Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 15 V Emitter Base Vo

1.18. 2n3498_99_2n3500_01.pdf Size:310K _cdil

2N34
2N34

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS 2N3499 2N3501 VCEO Collector Emitter Voltage 100 150 V VCBO Collector Base Voltage 100 150

1.19. 2n3496_7.pdf Size:190K _cdil

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2N34

Continental Device India Limited Q An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3496 2N3497 TO-18 Metal Can Package General Purpose Transistors for Switching and Linear Applications. DC Amplilfier & Driver For Industrial Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N3496 2N3497 UNIT

1.20. 2n3445.pdf Size:172K _jmnic

2N34
2N34

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3445 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNI

1.21. 2n3446.pdf Size:172K _jmnic

2N34
2N34

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3446 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNI

1.22. 2n3414.pdf Size:48K _microelectronics

2N34
2N34

1.23. 2n3418.pdf Size:63K _microsemi

2N34
2N34

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3418 APPLICATIONS: • Power Supply • Pulse Amplifier • High Frequency Power Switching 3 Amp, 85V, FEATURES: NPN Silicon Power • Meets MIL-S-19500/393 Transistors • Collector-Base Voltage: up to 85V JAN, JTX, JTXV, JANS • Peak Collector Current: 5A • High Power Dissipation in TO-5

1.24. 2n3419.pdf Size:63K _microsemi

2N34
2N34

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3419 APPLICATIONS: • Power Supply • Pulse Amplifier • High Frequency Power Switching 3 Amp, 125V, FEATURES: NPN Silicon Power • Meets MIL-S-19500/393 Transistors • Collector-Base Voltage: up to 125V JAN, JTX, JTXV, JANS • Peak Collector Current: 5A • High Power Dissipation in TO

1.25. 2n3420.pdf Size:63K _microsemi

2N34
2N34

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3420 APPLICATIONS: • Power Supply • Pulse Amplifier • High Frequency Power Switching 3 Amp, 85V, FEATURES: NPN Silicon Power • Meets MIL-S-19500/393 Transistors • Collector-Base Voltage: up to 85 JAN, JTX, JTXV, JANS • Peak Collector Current: 5A • High Power Dissipation in TO-5:

1.26. 2n3498_2n3499_2n3450_2n3451.pdf Size:69K _microsemi

2N34
2N34

TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 100 150 Vdc VCBO Emitter-Base Voltage 6.0 6.0 Vdc VEBO

1.27. 2n3421.pdf Size:63K _microsemi

2N34
2N34

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3421 APPLICATIONS: • Power Supply • Pulse Amplifier • High Frequency Power Switching 3 Amp, 125V, FEATURES: NPN Silicon Power • Meets MIL-S-19500/393 Transistors • Collector-Base Voltage: up to 125 JAN, JTX, JTXV, JANS • Peak Collector Current: 5A • High Power Dissipation in TO-

1.28. 2n3467.pdf Size:52K _semicoa

2N34
2N34

Data Sheet No. 2N3467 Generic Part Number: Type 2N3467 2N3467 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: • General-purpose transistor for switching and amplifier applica- tons. • Housed in a TO-39 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets i

1.29. 2n3497.pdf Size:47K _semicoa

2N34
2N34

Data Sheet No. 2N3498 Generic Part Number: Type 2N3498 2N3498 Geometry 5620 Polarity NPN REF: MIL-PRF-19500/366 Qual Level: JAN - JANTXV Features: • General-purpose silicon transistor for switching and amplifier appli- cations. • Housed in TO-39 case. • Also available in chip form using the 5620 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/366 which TO-39 S

1.30. 2n3468.pdf Size:79K _semicoa

2N34
2N34

Data Sheet No. 2N3468 Generic Part Number: Type 2N3468 2N3468 Geometry 6706 Polarity PNP REF: MIL-PRF-19500/348 Qual Level: JAN - JANTXV Features: • General-purpose transistor for switching and amplifier applica- tons. • Housed in a TO-39 case. • Also available in chip form using the 6706 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets i

1.31. 2n3486.pdf Size:45K _semicoa

2N34
2N34

Data Sheet No. 2N3486A Generic Part Number: Type 2N3486A 2N3486A Geometry 0600 Polarity PNP REF: MIL-PRF-19500/392 Qual Level: JAN - JANTXV Features: • General-purpose transistor for switching and amplifier applica- tons. • Housed in a TO-46 case. • Also available in chip form using the 0600 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/392 which Semicoa meet

1.32. 2n3485.pdf Size:45K _semicoa

2N34
2N34

Data Sheet No. 2N3485A Generic Part Number: Type 2N3485A 2N3485A Geometry 0600 Polarity PNP REF: MIL-PRF-19500/392 Qual Level: JAN - JANTXV Features: • General-purpose transistor for switching and amplifier applica- tons. • Housed in a TO-46 case. • Also available in chip form using the 0600 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/392 which Semicoa meet

1.33. 2n3441.pdf Size:130K _inchange_semiconductor

2N34
2N34

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25? APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: ·Driver for high power outputs ·Series and shunt regulators ·Audio and servo amplifiers ·So

1.34. 2n3447.pdf Size:129K _inchange_semiconductor

2N34
2N34

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIO

1.35. 2n3448.pdf Size:129K _inchange_semiconductor

2N34
2N34

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION ·With TO-3 package ·Excellent Safe Operating Area APPLICATIONS ·Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIO

1.36. 2n3442.pdf Size:130K _inchange_semiconductor

2N34
2N34

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3

1.37. 2n3445.pdf Size:114K _inchange_semiconductor

2N34
2N34

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC

1.38. 2n3446.pdf Size:114K _inchange_semiconductor

2N34
2N34

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION Ў¤ With TO-3 package Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for medium-switching and amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC

See also transistors datasheet: 2N3394 , 2N3394U , 2N3395 , 2N3396 , 2N3397 , 2N3398 , 2N3399 , 2N339A , 2N3053 , 2N340 , 2N3400 , 2N3401 , 2N3402 , 2N3403 , 2N3404 , 2N3405 , 2N3407 .

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